scholarly journals Mesoscopic-Scale and Small Strain Field beneath SiO2/Si Interface Revealed by a Multiple-Wave X-ray Diffraction Phenomenon — Depth of the Strain Field

2011 ◽  
Vol 9 ◽  
pp. 47-50
Author(s):  
Wataru Yashiro ◽  
Yoshitaka Yoda ◽  
Toshio Takahashi ◽  
Akinobu Teramoto ◽  
Takeo Hattori ◽  
...  
Keyword(s):  
Strain Field ◽  
Small Strain ◽  
X Ray Diffraction ◽  
Mesoscopic Scale ◽  
Multiple Wave ◽  
X Ray ◽  
Diffraction Phenomenon

scholarly journals Strain Field under the SiO2/Si Interface Revealed by a Multiple-Wave X-ray Diffraction Phenomenon

2007 ◽  
Vol 32 (1) ◽  
pp. 227-229
Author(s):  
Wataru Yashiro ◽  
Shuji Kusano ◽  
Kazushi Miki ◽  
Yoshitaka Yoda ◽  
Kensuke Takahashi, ◽  
...  
Keyword(s):  
Strain Field ◽  
X Ray Diffraction ◽  
Multiple Wave ◽  
X Ray ◽  
Diffraction Phenomenon

Grazing-angle Incidence X-ray Diffraction by the Si1-α(x)-β(x)Geβ(x)Cβ(x)/Si Heterojunction where the Germanium and the Carbon Concentrations are Periodically Varying along the Flat Layer Surface

2002 ◽  
Vol 716 ◽  
Author(s):  
Hayk H. Bezirganyan ◽  
Siranush E. Bezirganyan ◽  
Hakob P. Bezirganyan ◽  
Petros H. Bezirganyan
Keyword(s):  
Strain Field ◽  
Grazing Angle ◽  
Layer Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Intermediate Transformation ◽  
Long Period ◽  
Theoretical Paper ◽  
Carbon Concentrations ◽  
Coherent Part

AbstractPresented theoretical paper concerns the investigation of SiGeC/Si heterojunction by the Grazing-angle Incidence X-ray Diffraction (GIXD) method. We consider a possibility in principal of the GIXD by the specific long-range harmonic variations of the germanium and carbon compositions in the thin SiGeC layer. Evaluation of the theoretically calculated coherent part of x-radiation scattered by the SiGeC layer points the way to the experimental direct investigations of the long-period structured intermediate transformation states of SiGeC layer that emerge owing to inhomogeneity of the strain field along the heterojunction surface.

Structural and superconducting properties of melt-grown Y–Ba–Cu–O superconductors

1996 ◽  
Vol 11 (10) ◽  
pp. 2406-2415 ◽  
Author(s):  
R. Gopalan ◽  
T. Rajasekharan ◽  
T. Roy ◽  
G. Rangarajan ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Strain Field ◽  
Crack Width ◽  
Growth Process ◽  
Critical Radius ◽  
Radius Of Curvature ◽  
Superconducting Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

YBa2Cu3O7 (123) samples with varying Y2BaCuO5 (211) concentrations (0 mol%, 20 mol%, 28 mol%, and 50 mol%) were synthesized by the melt-growth process. Microstructural characterizations were done using x-ray diffraction (XRD), optical microscopy, scanning electron microscopy, and transmission electron microscopy (TEM). It was found that 123 platelet width, crack width between the platelets, and 211 particle size decreased systematically with increasing 211 concentration. TEM study showed that there is a critical radius of curvature (rc ≤ 0.2 μm-0.3 μm) of the 123/211 interface where defects/contrasts of strain field start to appear, and these defects are believed to be responsible for pinning the magnetic flux. Microhardness measurements showed that Vickers hardness (VHN) increases with increasing 211 content. Critical current density (Jc) values obtained from magnetization measurements using a SQUID magnetometer were found to increase in melt-grown samples by the addition of 211 content.

Evaluation of the Strain Field Inside and Around Growth Islands by Means of X-Ray Diffuse Scattering

1999 ◽  
Vol 583 ◽  
Author(s):  
Martin Schmidbauer ◽  
Thomas Wiebach ◽  
Helmut Raidt ◽  
Peter Schäfer ◽  
Michael hanke ◽  
...  
Keyword(s):  
Strain Field ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Abrupt Increase ◽  
X Ray ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Transmission Electron ◽  
Highly Strained

AbstractThe strain distribution inside and in the vicinity of coherently strained self-organized islands has been investigated by high-resolution x-ray diffraction (HRXRD). Finite element method (FEM) calculations were carried out in order to calculate the strain field, which was then used to simulate x-ray reciprocal space maps on the basis of kinematical scattering theory. For Si0 75Ge0.25 islands an abrupt increase in the Ge-concentration at about one third of the island height has been found. This behavior can be attributed to different nucleation stages during growth. Highly strained buried CdSe quantum dots (QDs) strongly influence the surrounding ZnSe matrix. From reciprocal space maps and FEM simulations we were able to estimate the shape and size of the islands. The results are in agreement with transmission electron microscopy (TEM) and UHV atomic force microscopy (AFM) data.

Effects of alternating strain on the structure of a metal

1953 ◽  
Vol 220 (1141) ◽  
pp. 255-266 ◽  
Keyword(s):  
Fatigue Crack ◽  
Crystalline Structure ◽  
Fatigue Failure ◽  
General Principle ◽  
Small Strain ◽  
Local Deformation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sharp Distinction ◽  
Tension And Compression

The work is part of researches into the cause of fatigue failure in metals. The effects on the crystalline structure of successive unidirectional tensile strains are compared with the effects of the same strains applied alternately in tension and compression. It is found that X-ray diffraction shows a sharp distinction between the direct and alternating deformation. This is interpreted as showing as a general principle that alternating reversals of a sufficiently small strain do not significantly extend the regions in the grain disturbed by its first application, though they may intensify this local deformation. It is shown that the theory of dislocations could account qualitatively for the localizing of the deformation and the forming of the fatigue crack in the affected regions.

X-Ray Diffraction Study of Phason Strain Field in Oriented Icosahedral Al-Mn

1987 ◽  
Vol 59 (19) ◽  
pp. 2239-2239
Author(s):  
J. D. Budai ◽  
J. Z. Tischler ◽  
A. Habenschuss ◽  
G. E. Ice ◽  
V. Elser
Keyword(s):  
Diffraction Study ◽  
Strain Field ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Oxidation process dependence of strain field under the SiO2/Si(001) interface revealed by X-ray multiple-wave diffraction

2007 ◽  
Vol 83 ◽  
pp. 012009
Author(s):  
W Yashiro ◽  
Y Yoda ◽  
K Takahashi ◽  
M Yamamoto ◽  
T Hattori ◽  
...  
Keyword(s):  
Wave Diffraction ◽  
Strain Field ◽  
Oxidation Process ◽  
Multiple Wave ◽  
X Ray

X-Ray Diffraction Contrast from Impurity Precipitates in CdS Single Crystals

1966 ◽  
Vol 10 ◽  
pp. 153-158 ◽  
Author(s):  
Jun-ichi Chikawa
Keyword(s):  
Strain Field ◽  
Crystal Surface ◽  
Bragg Angle ◽  
X Rays ◽  
Bragg Condition ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
X Ray ◽  
Impurity Doped ◽  
Free Plane

AbstractImpurity-doped crystals CdS(GaGl3) have been studied by X-ray topography. Some large precipitates are formed close to the crystal surfaces by annealing at 300°C. In the symmetrical Laue case, the precipitates show circular images (30-60 μ in diameter) due to the radial strains around the precipitates which consist of two semicircles separated by a contrast-free plane parallel to the reflecting plane. The observations indicate that the strain field between the crystal surface and precipitate is not responsible for the contrast, and that the images are formed by X-rays which are deviated from the Bragg condition for the perfect region and satisfy the Bragg condition in the strain field on the inside of the precipitate. One of the semicircles is formed by the incident X-rays with larger glancing angles than the Bragg angle and the other with smaller ones. It is concluded that this contrast is due to the strain around a convex lens shaped precipitate.

Effect of Network-Chain Length on Strain-Induced Crystallization of NR and IR Vulcanizates

2004 ◽  
Vol 77 (4) ◽  
pp. 711-723 ◽  
Author(s):  
Masatoshi Tosaka ◽  
Shinzo Kohjiya ◽  
Syozo Murakami ◽  
Sirilux Poompradub ◽  
Yuko Ikeda ◽  
...  
Keyword(s):  
Small Strain ◽  
Crosslinking Density ◽  
Wide Angle ◽  
X Ray Diffraction ◽  
Elongation Ratio ◽  
Network Chain ◽  
X Ray ◽  
Strain Induced Crystallization ◽  
Induced Crystallization ◽  
Isoprene Rubber

Abstract Strain-induced crystallization of natural rubber (NR) and synthetic isoprene rubber (IR) with various crosslinking densities was investigated by wide angle X-ray diffraction using a synchrotron radiation and simultaneous tensile measurements. The elongation ratio at the onset of crystallization (αc) was almost independent of crosslinking density. IR samples showed larger αc values than NR because of the lower stereoregularity of IR. These results suggest that the onset of crystallization is determined by increased melting temperature by strain due to an entropic reason. The amount of oriented amorphous component changed approximately linearly with strain, and was a little larger in IR than in NR when compared at the same elongation ratio. At small strain (and stress), crystallinity in IR was lower than in NR. These results indicate that, at small strain region, the more stress is assigned to oriented amorphous in IR than in NR.

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