Synthesis of two-dimensional MoS2 based on chemical vapor deposition and its electronic devices fabrication

2016 ◽  
Author(s):  
Wai Ching Cho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electronic Devices ◽  
Chemical Vapor ◽  
Two Dimensional

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications

2021 ◽  
Vol 54 (4) ◽  
pp. 1011-1022
Author(s):  
Kongyang Yi ◽  
Donghua Liu ◽  
Xiaosong Chen ◽  
Jun Yang ◽  
Dapeng Wei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Two Dimensional Materials

Chemical vapor deposition of layered two-dimensional MoSi2N4 materials

Science ◽  
2020 ◽  
Vol 369 (6504) ◽  
pp. 670-674 ◽  
Author(s):  
Yi-Lun Hong ◽  
Zhibo Liu ◽  
Lei Wang ◽  
Tianya Zhou ◽  
Wei Ma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Density Functional ◽  
Chemical Vapor ◽  
Large Family ◽  
Density Functional Theory Calculations ◽  
Layered Materials ◽  
Molybdenum Nitride ◽  
Two Dimensional ◽  
Chemical Vapor Deposition Growth

Identifying two-dimensional layered materials in the monolayer limit has led to discoveries of numerous new phenomena and unusual properties. We introduced elemental silicon during chemical vapor deposition growth of nonlayered molybdenum nitride to passivate its surface, which enabled the growth of centimeter-scale monolayer films of MoSi2N4. This monolayer was built up by septuple atomic layers of N-Si-N-Mo-N-Si-N, which can be viewed as a MoN2 layer sandwiched between two Si-N bilayers. This material exhibited semiconducting behavior (bandgap ~1.94 electron volts), high strength (~66 gigapascals), and excellent ambient stability. Density functional theory calculations predict a large family of such monolayer structured two-dimensional layered materials, including semiconductors, metals, and magnetic half-metals.

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