scholarly journals Analysis of Layered Structure at the Surface and Near-surface of Deposited Thin Film Materials by High-resolution Rutherford Backscattering Spectrometry

2002 ◽  
Vol 9 (2) ◽  
pp. 160-170
Author(s):  
Katsuaki Yanagiuchi ◽  
Wakako Shiramura
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Layered Structure ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Near Surface

Characterization of interface of Al–Ni/a-Si for thin film transistor using high-resolution Rutherford backscattering spectrometry

Micron ◽  
2009 ◽  
Vol 40 (1) ◽  
pp. 66-69 ◽  
Author(s):  
Chikara Ichihara ◽  
Nobuyuki Kawakami ◽  
Satoshi Yasuno ◽  
Aya Hino ◽  
Kazuhisa Fujikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Rutherford Backscattering Spectrometry ◽  
Thin Film Transistor ◽  
Rutherford Backscattering

Grain boundary Diffusion of Ni through Pd2Si

1983 ◽  
Vol 25 ◽  
Author(s):  
E. C. Zingu ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Boundary Diffusion ◽  
Rutherford Backscattering Spectrometry ◽  
High Mobility ◽  
Grain Boundary Diffusion ◽  
Rutherford Backscattering

ABSTRACTInterdiffusion in the Si<100>/Pd2Si/Ni and Si<111>/Pd2Si/Ni thin film systems has been investigated using Rutherford backscattering spectrometry. Nickel is found to diffuse along the grain boundaries of polycrystalline Pd2Si upon which it accumulates at the Si<100>Pd2Si interface. The high mobility of Ni compared to that of si suggests that Pd diffuses faster than Si along the Pd2Si grain boundaries. An activation energy of 1.2 eV is determined for Ni grain boundary diffusion in Pd2Si.

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