scholarly journals Atomic Structures of SiO2/Si and Ge/Si Interfaces Studied by Using Medium-Energy Ion Scattering.

Hyomen Kagaku ◽  
1993 ◽  
Vol 14 (7) ◽  
pp. 397-403
Author(s):  
Takashi NISHIOKA ◽  
Koji SUMITOMO
1998 ◽  
Vol 5 (3) ◽  
pp. 557-558 ◽  
Author(s):  
Hidetoshi Namba ◽  
Makoto Obara ◽  
Daisuke Kawakami ◽  
Tomoaki Nishimura ◽  
Yonglian Yan ◽  
...  

Apparatus for high-resolution synchrotron radiation photoelectron spectroscopy combined with high-resolution medium-energy ion scattering, named `SORIS', has been developed for simultaneous investigations of electronic states and atomic structures on surfaces. For this purpose, a compact vacuum-ultraviolet beamline of photon energy from 5 to 700 eV has been designed for the small storage ring `Aurora' installed at Ritsumeikan University. Owing to the small electron-beam size in the storage ring, an energy resolution E/dE of >5000 can be obtained.


1990 ◽  
Vol 202 ◽  
Author(s):  
J. Vrijmoeth ◽  
P.M. Zagwijn ◽  
J.W.M. Frenken ◽  
J.F. van der Veen

ABSTRACTThe surface structure of epitaxial NiSi2 films grown on Si (111) has been determined using a new method. The backscattering signals from subsequent Ni layers in the NiSi2 (111) surface are resolved.The topology of the NiSi2 (111) surface is concluded to be bulklike, i.e., it is terminated by a Si – Ni – Si triple layer.


2011 ◽  
Vol 605 (1-2) ◽  
pp. 220-224 ◽  
Author(s):  
Johan Gustafson ◽  
Andrew R. Haire ◽  
Christopher J. Baddeley

2007 ◽  
Vol 601 (2) ◽  
pp. 352-361 ◽  
Author(s):  
S.L. Harmer ◽  
L.V. Goncharova ◽  
R. Kolarova ◽  
W.N. Lennard ◽  
M.A. Muñoz-Márquez ◽  
...  

2006 ◽  
Vol 18 (22) ◽  
pp. 5017-5027 ◽  
Author(s):  
T C Q Noakes ◽  
P Bailey ◽  
M Draxler ◽  
C F McConville ◽  
A R Ross ◽  
...  

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