scholarly journals Theoretical investigation of the structural stability of zinc blende GaN thin films

2005 ◽  
Vol 3 ◽  
pp. 507-510 ◽  
Author(s):  
Tatsuya Araki ◽  
Toru Akiyama ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Thin Films ◽  
Structural Stability ◽  
Theoretical Investigation ◽  
Zinc Blende

Theoretical investigation on structural stability of InN thin films on 3C–SiC(001)

2008 ◽  
Vol 254 (23) ◽  
pp. 7672-7675 ◽  
Author(s):  
Takumi Ito ◽  
Toru Akiyama ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Thin Films ◽  
Structural Stability ◽  
Theoretical Investigation

Structural stability of titania thin films

1999 ◽  
Vol 11 (8) ◽  
pp. 1231-1237 ◽  
Author(s):  
P.I Gouma ◽  
P.K Dutta ◽  
M.J Mills
Keyword(s):  
Thin Films ◽  
Structural Stability

scholarly journals Structural Stability of Magnetic Tunnel Junction Based Molecular Spintronics Devices (MTJMSD)

2020 ◽  
Author(s):  
Joshua Dillard ◽  
Uzma Amir ◽  
Pawan Tyagi ◽  
Vincent Lamberti
Keyword(s):  
Thin Films ◽  
Structural Stability ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Molecular Devices ◽  
Metal Electrodes ◽  
Molecular Spintronics ◽  
Ferromagnetic Electrodes

Abstract Harnessing the exotic properties of molecular level nanostructures to produce novel sensors, metamaterials, and futuristic computer devices can be technologically transformative. In addition, connecting the molecular nanostructures to ferromagnetic electrodes bring the unprecedented opportunity of making spin property based molecular devices. We have demonstrated that magnetic tunnel junction based molecular spintronics device (MTJMSD) approach to address numerous technological hurdles that have been inhibiting this field for decades (P. Tyagi, J. Mater. Chem., Vol. 21, 4733). MTJMSD approach is based on producing a capacitor like a testbed where two metal electrodes are separated by an ultrathin insulator and subsequently bridging the molecule nanostructure across the insulator to transform a capacitor into a molecular device. Our prior work showed that MTJMSDs produced extremely intriguing phenomenon such as room temperature current suppression by six orders, spin photovoltaic effect, and evolution of new forms of magnetic metamaterials arising due to the interaction of the magnetic a molecule with two ferromagnetic thin films. However, making robust and reproducible electrical connections with exotic molecules with ferromagnetic electrodes is full of challenges and requires attention to MTJMSD structural stability. This paper focuses on MTJMSD stability by describing the overall fabrication protocol and the associated potential threat to reliability. MTJMSD is based on microfabrication methods such as (a) photolithography for patterning the ferromagnetic electrodes, (b) sputtering of metallic thin films and insulator, and (c) at the end electrochemical process for bridging the molecules between two ferromagnetic films separated by ∼ 2nm insulating gap. For the successful MTJMSD fabrication, the selection of ferromagnetic metal electrodes and thickness was found to be a deterministic factor in designing the photolithography, thin film deposition strategy, and molecular bridging process. We mainly used isotropic NiFe soft magnetic material and anisotropic Cobalt (Co) with significant magnetic hardness. We found Co was susceptible to chemical etching when directly exposed to photoresist developer and aged molecular solution. However, NiFe was very stable against the chemicals we used in the MTJMSD fabrication. As compared to NiFe, the Co films with > 10nm thickness were susceptible to mechanical stress-induced nanoscale deformities. However, cobalt was essential to produce (a) low leakage current before transforming the capacitor from the magnetic tunnel junction into molecular devices and (b) tailoring the magnetic properties of the ferromagnetic electrodes. This paper describes our overall MTJMSD fabrication scheme and process optimization to overcome various challenges to produce stable and reliable MTJMSDs. We also discuss the role of mechanical stresses arising during the sputtering of the ultrathin insulator and how to overcome that challenge by optimizing the insulator growth process. This paper will benefit researchers striving to make nanoscale spintronics devices for solving grand challenges in developing advanced sensors, magnetic metamaterials, and computer devices.

Substrates Effect on the Phase Transition of GaN Thin Films by Sputter Deposition

2019 ◽  
Vol 971 ◽  
pp. 79-84
Author(s):  
Chun Guang Zhang
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Nitrogen Atmosphere ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Pure Nitrogen ◽  
X Ray ◽  
Zinc Blende ◽  
Planar Magnetron ◽  
Pure Nitrogen Atmosphere

As a promising third generation semiconductor material, gallium nitride (GaN) has become a research hotspot in optoelectronic field nowadays. In this paper, GaN thin films were grown by radio frequency (RF) planar magnetron sputtering of a powder GaN target in a pure nitrogen atmosphere at (0.2 – 2.0) Pa, (10 - 100) W onto various substrates such as GaAs (100), Si (100), Si (111), Al2O3(0001) and glass without any buffer layer. A clear phase transition from the metastable cubic zinc-blende (c - ZB) to the stable hexagonal wurtzite (h - WZ) dependence on substrates has been found in the GaN thin films. And the phase transition of GaN films were studied by X-ray diffraction (XRD), photoluminescence (PL) and Raman spectroscopy.

Conduction-electron spin resonance in zinc-blende GaN thin films

1993 ◽  
Vol 48 (20) ◽  
pp. 15144-15147 ◽  
Author(s):  
M. Fanciulli ◽  
T. Lei ◽  
T. D. Moustakas
Keyword(s):  
Thin Films ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Conduction Electron ◽  
Zinc Blende ◽  
Spin Resonance

Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current

2012 ◽  
Vol 338 (1) ◽  
pp. 129-133 ◽  
Author(s):  
Hiroto Oomae ◽  
Joel T. Asubar ◽  
Shinichi Nakamura ◽  
Yoshio Jinbo ◽  
Naotaka Uchitomi
Keyword(s):  
Thin Films ◽  
Zinc Blende ◽  
Spin Polarized
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