Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition

2008 ◽  
Vol 155 (7) ◽  
pp. D517 ◽  
Author(s):  
David Avellaneda ◽  
M. T. S. Nair ◽  
P. K. Nair
Keyword(s):  
Thin Films ◽  
Chemical Deposition ◽  
Tin Sulfide ◽  
Zinc Blende

Chemically and Electrochemically Deposited Thin Films of Tin Sulfide for Photovoltaic Structures

2009 ◽  
Vol 1165 ◽  
Author(s):  
Nini Rose Mathews
Keyword(s):  
Thin Films ◽  
Short Circuit ◽  
Chemical Deposition ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Tin Sulfide ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Glass Substrates

AbstractThin films of tin sulfide (SnS) were deposited on TCO-coated glass substrates by pulse electrodeposition. Cyclic voltammetry showed that SnS deposition occurs in the -0.8 V to −1 V range. The films deposited using the potential pulses of -0.95V (Von) and +0.1V (Voff) are of orthorhombic crystal structure with lattice parameters and grain size similar to those of the thin films of orthorhombic structure obtained by chemical deposition. The optical band gap of the films was 1.3 eV. In CdS/SnS heterojunctions an open circuit voltage110 mV, short circuit current density 0.72 mA/cm2 and fill factor of 0.32 are reported here.

UV irradiated wet chemical deposition and characterization of nanostructured tin sulfide thin films

2012 ◽  
Vol 23 (12) ◽  
pp. 2264-2271 ◽  
Author(s):  
A. J. Ragina ◽  
K. V. Murali ◽  
K. C. Preetha ◽  
K. Deepa ◽  
T. L. Remadevi
Keyword(s):  
Thin Films ◽  
Chemical Deposition ◽  
Tin Sulfide ◽  
Wet Chemical

The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

2021 ◽  
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Metal Ion ◽  
Chemical Deposition ◽  
Review Article ◽  
Complexing Agents ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

Improved mobility of sol-gel method processed transparent tin sulfide thin films

2016 ◽  
Vol 178 ◽  
pp. 231-234 ◽  
Author(s):  
Jian Sun ◽  
Yifei Huang ◽  
Sha Nie ◽  
Zequn Chen ◽  
Jianmei Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Tin Sulfide ◽  
Gel Method ◽  
Sol Gel Method

Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu2SnS3/ITO Thin Films

2022 ◽  
Vol 1048 ◽  
pp. 189-197
Author(s):  
Tippasani Srinivasa Reddy ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Nir Spectroscopy ◽  
Stoichiometric Ratio ◽  
Tin Sulfide ◽  
Structural And Optical Properties ◽  
Average Grain Size ◽  
Deposited Films

In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.

Annealing effects on the properties of copper oxide thin films prepared by chemical deposition

2005 ◽  
Vol 20 (5) ◽  
pp. 398-401 ◽  
Author(s):  
Necmi Serin ◽  
Tülay Serin ◽  
Şeyda Horzum ◽  
Yasemin Çelik
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Chemical Deposition ◽  
Oxide Thin Films ◽  
Annealing Effects
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