Energy bands of thin films of diamond and zinc blende semiconductors (100)

1983 ◽  
Vol 1 (2) ◽  
pp. 399-402
Author(s):  
Yuyi Shen
Keyword(s):  
2019 ◽  
Vol 971 ◽  
pp. 79-84
Author(s):  
Chun Guang Zhang

As a promising third generation semiconductor material, gallium nitride (GaN) has become a research hotspot in optoelectronic field nowadays. In this paper, GaN thin films were grown by radio frequency (RF) planar magnetron sputtering of a powder GaN target in a pure nitrogen atmosphere at (0.2 – 2.0) Pa, (10 - 100) W onto various substrates such as GaAs (100), Si (100), Si (111), Al2O3(0001) and glass without any buffer layer. A clear phase transition from the metastable cubic zinc-blende (c - ZB) to the stable hexagonal wurtzite (h - WZ) dependence on substrates has been found in the GaN thin films. And the phase transition of GaN films were studied by X-ray diffraction (XRD), photoluminescence (PL) and Raman spectroscopy.


1976 ◽  
Vol 14 (8) ◽  
pp. 3185-3192 ◽  
Author(s):  
K. S. Sohn ◽  
D. G. Dempsey ◽  
Leonard Kleinman ◽  
Ed Caruthers
Keyword(s):  

1993 ◽  
Vol 48 (20) ◽  
pp. 15144-15147 ◽  
Author(s):  
M. Fanciulli ◽  
T. Lei ◽  
T. D. Moustakas

2012 ◽  
Vol 338 (1) ◽  
pp. 129-133 ◽  
Author(s):  
Hiroto Oomae ◽  
Joel T. Asubar ◽  
Shinichi Nakamura ◽  
Yoshio Jinbo ◽  
Naotaka Uchitomi

2015 ◽  
Vol 139 ◽  
pp. 63-65 ◽  
Author(s):  
L. Martínez-Pérez ◽  
N. Muñoz-Aguirre ◽  
S. Muñoz-Aguirre ◽  
O. Zelaya-Angel

2000 ◽  
Vol 77 (10) ◽  
pp. 1461-1463 ◽  
Author(s):  
Y. Yan ◽  
M. M. Al-Jassim ◽  
K. M. Jones ◽  
S.-H. Wei ◽  
S. B. Zhang

2018 ◽  
Vol 122 (22) ◽  
pp. 12090-12097 ◽  
Author(s):  
Yuki Kashimoto ◽  
Keiichirou Yonezawa ◽  
Matthias Meissner ◽  
Marco Gruenewald ◽  
Takahiro Ueba ◽  
...  

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