Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap”

2020 ◽  
Vol 8 (5) ◽  
pp. 750 ◽  
Author(s):  
Chunyu Zhao ◽  
Chak Wah Tang ◽  
Billy Lai ◽  
Guanghui Cheng ◽  
Jiannong Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Low Efficiency

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062103 ◽  
Author(s):  
Chih-Chien Pan ◽  
Shinichi Tanaka ◽  
Feng Wu ◽  
Yuji Zhao ◽  
James S. Speck ◽  
...  
Keyword(s):  
Quantum Well ◽  
Blue Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Low Efficiency

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

2011 ◽  
Vol 4 (8) ◽  
pp. 082104 ◽  
Author(s):  
Yuji Zhao ◽  
Shinichi Tanaka ◽  
Chih-Chien Pan ◽  
Kenji Fujito ◽  
Daniel Feezell ◽  
...  
Keyword(s):  
High Power ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Low Efficiency

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

2010 ◽  
Vol 96 (23) ◽  
pp. 231101 ◽  
Author(s):  
Shih-Chun Ling ◽  
Tien-Chang Lu ◽  
Shih-Pang Chang ◽  
Jun-Rong Chen ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Low Efficiency

Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence

2016 ◽  
Vol 12 (7) ◽  
pp. 736-741 ◽  
Author(s):  
Houqiang Fu ◽  
Zhijian Lu ◽  
Xin-Hao Zhao ◽  
Yong-Hang Zhang ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Time Resolved ◽  
Light Emitting ◽  
Low Efficiency ◽  
Time Resolved Photoluminescence

scholarly journals Toward Ultra-Low Efficiency Droop in C-Plane Polar InGaN Light-Emitting Diodes by Reducing Carrier Density with a Wide InGaN Last Quantum Well

2019 ◽  
Vol 9 (15) ◽  
pp. 3004
Author(s):  
Yongbing Zhao ◽  
Panpan Li
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Carrier Density ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
High Current Density ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Low Efficiency

We demonstrate an ultra-low efficiency droop in c-plane polar InGaN blue light-emitting diodes (LEDs) by reducing the carrier density using a wide InGaN last quantum well (LQW). It is found that the LEDs with a 5.2 nm thick LQW show a negligible efficiency droop, with an external quantum efficiency (EQE) reducing from a peak value of 38.8% to 36.4% at 100 A/cm2 and the onset-droop current density is raised from 3 A/cm2 to 40 A/cm2 as the LQW thickness increases from 3.0 nm to 5.2 nm. The analysis based on the ABC model indicates that small efficiency droop is caused by the reduced carrier density using a wide LQW. The peak efficiency is reduced with a wide LQW, which is caused by the reduction of the electron-hole wavefunction overlap and the deterioration of the crystal quality of the InGaN layer. This study suggests that the application of the InGaN LEDs with a wide LQW can be a promising and simple remedy for achieving high efficiency at a high current density.

High optical power and low‐efficiency droop blue light‐emitting diodes using compositionally step‐graded InGaN barrier

2015 ◽  
Vol 51 (15) ◽  
pp. 1187-1189 ◽  
Author(s):  
Chih‐Chien Pan ◽  
Qimin Yan ◽  
Houqiang Fu ◽  
Yuji Zhao ◽  
Yuh‐Renn Wu ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Optical Power ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Low Efficiency
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