scholarly journals Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065013 ◽  
Author(s):  
Houqiang Fu ◽  
Zhijian Lu ◽  
Yuji Zhao
Keyword(s):  
Phase Space ◽  
Quantum Well ◽  
Rate Equation ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Space Filling ◽  
Light Emitting ◽  
Weak Phase ◽  
Low Efficiency

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062103 ◽  
Author(s):  
Chih-Chien Pan ◽  
Shinichi Tanaka ◽  
Feng Wu ◽  
Yuji Zhao ◽  
James S. Speck ◽  
...  
Keyword(s):  
Quantum Well ◽  
Blue Light ◽  
High Power ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Low Efficiency

scholarly journals Toward Ultra-Low Efficiency Droop in C-Plane Polar InGaN Light-Emitting Diodes by Reducing Carrier Density with a Wide InGaN Last Quantum Well

2019 ◽  
Vol 9 (15) ◽  
pp. 3004
Author(s):  
Yongbing Zhao ◽  
Panpan Li
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Carrier Density ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
High Current Density ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Low Efficiency

We demonstrate an ultra-low efficiency droop in c-plane polar InGaN blue light-emitting diodes (LEDs) by reducing the carrier density using a wide InGaN last quantum well (LQW). It is found that the LEDs with a 5.2 nm thick LQW show a negligible efficiency droop, with an external quantum efficiency (EQE) reducing from a peak value of 38.8% to 36.4% at 100 A/cm2 and the onset-droop current density is raised from 3 A/cm2 to 40 A/cm2 as the LQW thickness increases from 3.0 nm to 5.2 nm. The analysis based on the ABC model indicates that small efficiency droop is caused by the reduced carrier density using a wide LQW. The peak efficiency is reduced with a wide LQW, which is caused by the reduction of the electron-hole wavefunction overlap and the deterioration of the crystal quality of the InGaN layer. This study suggests that the application of the InGaN LEDs with a wide LQW can be a promising and simple remedy for achieving high efficiency at a high current density.

Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells

2010 ◽  
Vol 43 (35) ◽  
pp. 354004 ◽  
Author(s):  
Sang-Heon Han ◽  
Dong-Yul Lee ◽  
Hyun-Wook Shim ◽  
Gwon-Chul Kim ◽  
Young Sun Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Efficiency Droop ◽  
Multiple Quantum ◽  
Light Emitting

Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

2010 ◽  
Vol 54 (10) ◽  
pp. 1119-1124 ◽  
Author(s):  
Hongping Zhao ◽  
Guangyu Liu ◽  
Ronald A. Arif ◽  
Nelson Tansu
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Current Injection ◽  
Efficiency Droop ◽  
Injection Efficiency ◽  
Light Emitting

scholarly journals Efficiency Droop and Effective Active Volume in GaN-Based Light-Emitting Diodes Grown on Sapphire and Silicon Substrates

2019 ◽  
Vol 9 (19) ◽  
pp. 4160 ◽  
Author(s):  
Ryu ◽  
Ryu ◽  
Onwukaeme
Keyword(s):  
Quantum Well ◽  
Rate Equation ◽  
Equation Model ◽  
Efficiency Droop ◽  
Internal Electric Field ◽  
Active Volume ◽  
Light Emitting ◽  
Rate Equation Model ◽  
Sapphire Substrates ◽  
The Difference

We compared the efficiency droop of InGaN multiple-quantum-well (MQW) blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates and analyzed the efficiency droop characteristics using the rate equation model with reduced effective active volume. The efficiency droop of the LED sample on silicon was observed to be reduced considerably compared with that of the identical LED sample on sapphire substrates. When the measured external quantum efficiency was fitted with the rate equation model, the effective active volume of the MQW on silicon was found to be ~1.45 times larger than that of the MQW on sapphire. The lower efficiency droop in the LED on silicon could be attributed to its larger effective active volume compared with the LED on sapphire. The simulation results showed that the effective active volume decreased as the internal electric fields increased, as a result of the reduced overlap of the electron and hole distribution inside the quantum well and the inhomogeneous carrier distribution in the MQWs. The difference in the internal electric field of the MQW between the LED on silicon and sapphire could be a major reason for the difference in the effective active volume, and consequently, the efficiency droop.

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

2011 ◽  
Vol 4 (8) ◽  
pp. 082104 ◽  
Author(s):  
Yuji Zhao ◽  
Shinichi Tanaka ◽  
Chih-Chien Pan ◽  
Kenji Fujito ◽  
Daniel Feezell ◽  
...  
Keyword(s):  
High Power ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Low Efficiency

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

2010 ◽  
Vol 96 (23) ◽  
pp. 231101 ◽  
Author(s):  
Shih-Chun Ling ◽  
Tien-Chang Lu ◽  
Shih-Pang Chang ◽  
Jun-Rong Chen ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Low Efficiency
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