Growth of large-area atomically thin MoS_2 film via ambient pressure chemical vapor deposition

2015 ◽  
Vol 3 (4) ◽  
pp. 110 ◽  
Author(s):  
Caiyun Chen ◽  
Hong Qiao ◽  
Yunzhou Xue ◽  
Wenzhi Yu ◽  
Jingchao Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Large Area ◽  
Pressure Chemical

scholarly journals Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3112
Author(s):  
Ruinan Wu ◽  
Yueguo Hu ◽  
Peisen Li ◽  
Junping Peng ◽  
Jiafei Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Sharp Interface ◽  
Large Area ◽  
Oriented Growth ◽  
High Quality ◽  
Pressure Chemical

The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al2O3 (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.

scholarly journals Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration

2016 ◽  
Vol 138 (47) ◽  
pp. 15488-15496 ◽  
Author(s):  
Zongping Chen ◽  
Wen Zhang ◽  
Carlos-Andres Palma ◽  
Alberto Lodi Rizzini ◽  
Bilu Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Graphene Nanoribbons ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Device Integration ◽  
Pressure Chemical

Synthesis of large-area uniform MoS 2 films by substrate-moving atmospheric pressure chemical vapor deposition: from monolayer to multilayer

2D Materials ◽  
2019 ◽  
Vol 6 (2) ◽  
pp. 025030 ◽  
Author(s):  
Tianying He ◽  
Yongjun Li ◽  
Zhifei Zhou ◽  
Cheng Zeng ◽  
Liang Qiao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Large Area ◽  
Pressure Chemical

Water-assisted controllable growth of atomically thin WTe2 nanoflakes by chemical vapor deposition based on precursor design and substrate engineering strategies

2022 ◽  
Author(s):  
Guoliang Zhou ◽  
Hui Gao ◽  
Jin Li ◽  
Xiaoyue He ◽  
Yanbing He ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Quantum Spin ◽  
Chemical Vapor Deposition Method ◽  
Large Area ◽  
Substrate Engineering ◽  
Controllable Growth

Abstract WTe2 nanostructures have intrigued much attention due to their unique properties, such as large non-saturating magnetoresistance, quantum spin Hall effect and topological surface state. However, the controllable growth of large-area atomically thin WTe2 nanostructures remains a significant challenge. In the present work, we demonstrate the controllable synthesis of 1T’ atomically thin WTe2 nanoflakes (NFs) by water-assisted ambient pressure chemical vapor deposition method based on precursor design and substrate engineering strategies. The introduction of water during the growth process can generate a new synthesized route by reacting with WO3 to form intermediate volatile metal oxyhydroxide. Using WO3 foil as the growth precursor can drastically enhance the uniformity of as-prepared large-area 1T’ WTe2 NFs compared to WO3 powders. Moreover, highly oriented WTe2 NFs with distinct orientations can be obtained by using a-plane and c-plane sapphire substrates, respectively. Corresponding precursor design and substrate engineering strategies are expected to be applicable to other low dimensional transition metal dichalcogenides, which are crucial for the design of novel electronic and optoelectronic devices.

Sign in / Sign up

Export Citation Format

Share Document