scholarly journals Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration

2016 ◽  
Vol 138 (47) ◽  
pp. 15488-15496 ◽  
Author(s):  
Zongping Chen ◽  
Wen Zhang ◽  
Carlos-Andres Palma ◽  
Alberto Lodi Rizzini ◽  
Bilu Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Graphene Nanoribbons ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Device Integration ◽  
Pressure Chemical

Growth of large-area atomically thin MoS_2 film via ambient pressure chemical vapor deposition

2015 ◽  
Vol 3 (4) ◽  
pp. 110 ◽  
Author(s):  
Caiyun Chen ◽  
Hong Qiao ◽  
Yunzhou Xue ◽  
Wenzhi Yu ◽  
Jingchao Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Large Area ◽  
Pressure Chemical

Thickness Controlled Water Vapors Assisted Growth of Multilayer Graphene by Ambient Pressure Chemical Vapor Deposition

2015 ◽  
Vol 119 (6) ◽  
pp. 3079-3089 ◽  
Author(s):  
Muhammad Asif ◽  
Yi Tan ◽  
Lujun Pan ◽  
Jiayan Li ◽  
Muhammad Rashad ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Water Vapors ◽  
Pressure Chemical

scholarly journals Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3112
Author(s):  
Ruinan Wu ◽  
Yueguo Hu ◽  
Peisen Li ◽  
Junping Peng ◽  
Jiafei Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Sharp Interface ◽  
Large Area ◽  
Oriented Growth ◽  
High Quality ◽  
Pressure Chemical

The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al2O3 (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.

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