scholarly journals Bulk sensing performance comparison between silicon dioxide and resonant high aspect ratio nanopillars arrays fabricated by means of interference lithography

2016 ◽  
Vol 6 (7) ◽  
pp. 2264 ◽  
Author(s):  
I. Cornago ◽  
A. L. Hernández ◽  
R. Casquel ◽  
M. Holgado ◽  
M. F. Laguna ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Silicon Dioxide ◽  
High Aspect Ratio ◽  
Performance Comparison ◽  
Interference Lithography ◽  
Sensing Performance

Fabrication of high aspect ratio nanoscale periodic structures by the soft X-ray interference lithography

2017 ◽  
Vol 170 ◽  
pp. 49-53 ◽  
Author(s):  
Jun Zhao ◽  
Yanqing Wu ◽  
Chaofan Xue ◽  
Shumin Yang ◽  
Liansheng Wang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Periodic Structures ◽  
Interference Lithography ◽  
X Ray

Constrained Order in Nanoporous Alumina with High Aspect Ratio: Smart Combination of Interference Lithography and Hard Anodization

2013 ◽  
Vol 24 (13) ◽  
pp. 1857-1863 ◽  
Author(s):  
Josep M. Montero Moreno ◽  
Martin Waleczek ◽  
Stephan Martens ◽  
Robert Zierold ◽  
Detlef Görlitz ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Interference Lithography ◽  
Nanoporous Alumina

High Aspect Ratio Silicon Dioxide-Coated Single-Walled Carbon Nanotube Scanning Probe Nanoelectrodes

2009 ◽  
Vol 113 (16) ◽  
pp. 6815-6820 ◽  
Author(s):  
Yoshie Narui ◽  
Donato M. Ceres ◽  
Jinyu Chen ◽  
Konstantinos P. Giapis ◽  
C. Patrick Collier
Keyword(s):  
Carbon Nanotube ◽  
Aspect Ratio ◽  
Silicon Dioxide ◽  
High Aspect Ratio ◽  
Scanning Probe ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon

Fabrication of Dual-Damascene Structures in Low Dielectric Constant Polymers for Multilevel Interconnects

1996 ◽  
Vol 427 ◽  
Author(s):  
R. Tacito ◽  
C. Steinbrüchel
Keyword(s):  
Dielectric Constant ◽  
Aspect Ratio ◽  
Silicon Dioxide ◽  
High Aspect Ratio ◽  
Reactive Ion Etching ◽  
Low Dielectric Constant ◽  
Ion Etching ◽  
Fine Line ◽  
Dual Damascene ◽  
Low Dielectric

AbstractParylene-n (pa-n) and benzocyclobutene (BCB) are novel candidate materials for interlevel dielectrics in future multilevel interconnects, due to their dielectric constant being much lower than that of silicon dioxide. We describe the fine line patterning of these materials by reactive ion etching in O2/CF4 plasmas. Examples of high aspect ratio trenches and dual damascene structures are presented involving processes with single and double hardmasks.

Fabrication of large-area high-aspect-ratio periodic nanostructures on various substrates by soft X-ray interference lithography

2017 ◽  
Vol 425 ◽  
pp. 553-557 ◽  
Author(s):  
Chaofan Xue ◽  
Jun Zhao ◽  
Yanqing Wu ◽  
Huaina Yu ◽  
Shumin Yang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Interference Lithography ◽  
Large Area ◽  
Periodic Nanostructures ◽  
X Ray

High-aspect-ratio silicon dioxide pillars

2005 ◽  
Vol 202 (8) ◽  
pp. 1634-1638 ◽  
Author(s):  
T. Trifonov ◽  
A. Rodríguez ◽  
F. Servera ◽  
L. F. Marsal ◽  
J. Pallarès ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Silicon Dioxide ◽  
High Aspect Ratio

scholarly journals Alignment method combining interference lithography with anisotropic wet etch technique for fabrication of high aspect ratio silicon gratings

2014 ◽  
Vol 22 (19) ◽  
pp. 23592 ◽  
Author(s):  
Yanchang Zheng ◽  
Keqiang Qiu ◽  
Huoyao Chen ◽  
Yong Chen ◽  
Zhengkun Liu ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Interference Lithography ◽  
Alignment Method ◽  
Wet Etch
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