scholarly journals Alignment method combining interference lithography with anisotropic wet etch technique for fabrication of high aspect ratio silicon gratings

2014 ◽  
Vol 22 (19) ◽  
pp. 23592 ◽  
Author(s):  
Yanchang Zheng ◽  
Keqiang Qiu ◽  
Huoyao Chen ◽  
Yong Chen ◽  
Zhengkun Liu ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Interference Lithography ◽  
Alignment Method ◽  
Wet Etch

Fabrication of high aspect ratio nanoscale periodic structures by the soft X-ray interference lithography

2017 ◽  
Vol 170 ◽  
pp. 49-53 ◽  
Author(s):  
Jun Zhao ◽  
Yanqing Wu ◽  
Chaofan Xue ◽  
Shumin Yang ◽  
Liansheng Wang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Periodic Structures ◽  
Interference Lithography ◽  
X Ray

Constrained Order in Nanoporous Alumina with High Aspect Ratio: Smart Combination of Interference Lithography and Hard Anodization

2013 ◽  
Vol 24 (13) ◽  
pp. 1857-1863 ◽  
Author(s):  
Josep M. Montero Moreno ◽  
Martin Waleczek ◽  
Stephan Martens ◽  
Robert Zierold ◽  
Detlef Görlitz ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Interference Lithography ◽  
Nanoporous Alumina

A Spin-on Dielectric Material for High Aspect Ratio Gap Fill

2005 ◽  
Vol 863 ◽  
Author(s):  
Wei Chen ◽  
Sheng Wang ◽  
Ather Ashraf ◽  
Edward Somerville ◽  
Gerard Nowaczyk ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Thermal Processing ◽  
Dielectric Material ◽  
Hydrogen Silsesquioxane ◽  
Shallow Trench Isolation ◽  
Nano Scale ◽  
Main Challenge ◽  
Trench Isolation ◽  
Wet Etch

AbstractThis communication describes the results of a potential spin-on glass (SOG) solution for narrow and high aspect ratio trench fill in both shallow trench isolation (STI) and premetal dielectric (PMD) applications. We have focused our development work on a hydrogen silsesquioxane (HSQ, (HSiO3/2)n) material, which offers the advantage of a carbon free gap fill solution. The main challenge for carbon-free SOG materials is to achieve material densification in the nano-scale gaps during thermal processing that of the gap filled material during the wet cleaning steps. This paper reports some approaches and findings on material densification in the nano-scale gaps and the results of subsequent wet etch tests.

Fabrication of large-area high-aspect-ratio periodic nanostructures on various substrates by soft X-ray interference lithography

2017 ◽  
Vol 425 ◽  
pp. 553-557 ◽  
Author(s):  
Chaofan Xue ◽  
Jun Zhao ◽  
Yanqing Wu ◽  
Huaina Yu ◽  
Shumin Yang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Interference Lithography ◽  
Large Area ◽  
Periodic Nanostructures ◽  
X Ray
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