scholarly journals Room-temperature deposition of ZnS antireflection coatings for MIR-LWIR applications

2021 ◽  
Author(s):  
Christian De Vita ◽  
Marco Asa ◽  
Claudio Somaschini ◽  
Mikel Urquia ◽  
Maria Eloisa Castagna ◽  
...  
APL Materials ◽  
2018 ◽  
Vol 6 (7) ◽  
pp. 076107 ◽  
Author(s):  
Tomas Polakovic ◽  
Sergi Lendinez ◽  
John E. Pearson ◽  
Axel Hoffmann ◽  
Volodymyr Yefremenko ◽  
...  

Author(s):  
Wuttichai Phae-ngam ◽  
Tossaporn Lertvanithphol ◽  
Chanunthorn Chananonnawathorn ◽  
Rattanachai Kowong ◽  
Mati Horprathum ◽  
...  

2017 ◽  
Vol 330 ◽  
pp. 87-91 ◽  
Author(s):  
Deyan Li ◽  
Yongfeng Gong ◽  
Xiuyong Chen ◽  
Botao Zhang ◽  
Haijun Zhang ◽  
...  

2012 ◽  
Vol 482-484 ◽  
pp. 394-397
Author(s):  
Ming Wei Li ◽  
Nan Hai Sun ◽  
Yun Wang Ge ◽  
Bo Lei Yao

This paper presents a new buffering layer(nickle oxide thin film) of organic solar cells. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. And the best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.


2018 ◽  
Vol 44 (14) ◽  
pp. 16295-16301 ◽  
Author(s):  
Neamul H. Khansur ◽  
Udo Eckstein ◽  
Lisa Benker ◽  
Ulrike Deisinger ◽  
Benoit Merle ◽  
...  

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Chun-Chieh Chang ◽  
John Nogan ◽  
Zu-Po Yang ◽  
Wilton J. M. Kort-Kamp ◽  
Willard Ross ◽  
...  

Abstract Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.


2020 ◽  
Vol 116 (6) ◽  
pp. 062901 ◽  
Author(s):  
Takanori Mimura ◽  
Takao Shimizu ◽  
Hiroshi Uchida ◽  
Hiroshi Funakubo

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