Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method

2020 ◽  
Vol 116 (6) ◽  
pp. 062901 ◽  
Author(s):  
Takanori Mimura ◽  
Takao Shimizu ◽  
Hiroshi Uchida ◽  
Hiroshi Funakubo
Keyword(s):  
Room Temperature ◽  
Temperature Deposition

scholarly journals Room temperature deposition of superconducting niobium nitride films by ion beam assisted sputtering

APL Materials ◽  
2018 ◽  
Vol 6 (7) ◽  
pp. 076107 ◽  
Author(s):  
Tomas Polakovic ◽  
Sergi Lendinez ◽  
John E. Pearson ◽  
Axel Hoffmann ◽  
Volodymyr Yefremenko ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Niobium Nitride ◽  
Temperature Deposition

Room temperature deposition of crystalline HfN thin films by DC reactive magnetron sputtering

2021 ◽  
Author(s):  
Wuttichai Phae-ngam ◽  
Tossaporn Lertvanithphol ◽  
Chanunthorn Chananonnawathorn ◽  
Rattanachai Kowong ◽  
Mati Horprathum ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Temperature Deposition

Room-temperature deposition of hydroxyapatite/antibiotic composite coatings by vacuum cold spraying for antibacterial applications

2017 ◽  
Vol 330 ◽  
pp. 87-91 ◽  
Author(s):  
Deyan Li ◽  
Yongfeng Gong ◽  
Xiuyong Chen ◽  
Botao Zhang ◽  
Haijun Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Composite Coatings ◽  
Cold Spraying ◽  
Temperature Deposition

A New Buffering Layer of Photovoltaic Solar Cells

2012 ◽  
Vol 482-484 ◽  
pp. 394-397
Author(s):  
Ming Wei Li ◽  
Nan Hai Sun ◽  
Yun Wang Ge ◽  
Bo Lei Yao
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Organic Solar Cells ◽  
Room Temperature ◽  
Acid Methyl Ester ◽  
Good Alternative ◽  
Oxide Thin Film ◽  
Nio Thin Film ◽  
Temperature Deposition ◽  
Photovoltaic Solar Cells

This paper presents a new buffering layer(nickle oxide thin film) of organic solar cells. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. And the best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.

Room temperature deposition of functional ceramic films on low-cost metal substrate

2018 ◽  
Vol 44 (14) ◽  
pp. 16295-16301 ◽  
Author(s):  
Neamul H. Khansur ◽  
Udo Eckstein ◽  
Lisa Benker ◽  
Ulrike Deisinger ◽  
Benoit Merle ◽  
...  
Keyword(s):  
Room Temperature ◽  
Low Cost ◽  
Metal Substrate ◽  
Ceramic Films ◽  
Temperature Deposition ◽  
Functional Ceramic

scholarly journals Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Chun-Chieh Chang ◽  
John Nogan ◽  
Zu-Po Yang ◽  
Wilton J. M. Kort-Kamp ◽  
Willard Ross ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Room Temperature ◽  
Atomic Layer ◽  
Deposition Process ◽  
Attractive Alternative ◽  
Tin Films ◽  
Periodic Arrays ◽  
Alternative Material ◽  
Tin Thin Films ◽  
Temperature Deposition

Abstract Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.

Room temperature deposition of ITO using r.f. magnetron sputtering

2002 ◽  
Vol 413 (1-2) ◽  
pp. 181-185 ◽  
Author(s):  
T.C Gorjanc ◽  
D Leong ◽  
C Py ◽  
D Roth
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Temperature Deposition
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