scholarly journals Nanometric light spots of cathode luminescence in Y_2O_3:Eu^3+ phosphor thin films excited by focused electron beams as ultra-small illumination source for high-resolution optical microscope

2013 ◽  
Vol 4 (1) ◽  
pp. 155 ◽  
Author(s):  
Atsushi Sugita ◽  
Masashi Kamiya ◽  
Chiyu Morita ◽  
Aki Miyake ◽  
Yasunori Nawa ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Electron Beams ◽  
Optical Microscope ◽  
Cathode Luminescence ◽  
Illumination Source

Cosmetology treatments on human hair: An SEM study

1996 ◽  
Vol 54 ◽  
pp. 940-941
Author(s):  
D.F. Bowling
Keyword(s):  
High School ◽  
High Resolution ◽  
Human Hair ◽  
Optical Microscope ◽  
Convincing Evidence ◽  
Brightness Contrast ◽  
Sem Study

High school cosmetology students study the methods and effects of various human hair treatments, including permanents, straightening, conditioning, coloring and cutting. Although they are provided with textbook examples of overtreatment and numerous hair disorders and diseases, a view of an individual hair at the high resolution offered by an SEM provides convincing evidence of the hair‘s altered structure. Magnifications up to 2000X provide dramatic differences in perspective. A good quality classroom optical microscope can be very informative at lower resolutions.Students in a cosmetology class are initially split into two groups. One group is taught basic controls on the SEM (focus, magnification, brightness, contrast, specimen X, Y, and Z axis movements). A healthy, untreated piece of hair is initially examined on the SEM The second group cements a piece of their own hair on a stub. The samples are dryed quickly using heat or vacuum while the groups trade places and activities.

New form of Transmission Cross Coefficient for High-Resolution Imaging

1990 ◽  
Vol 48 (1) ◽  
pp. 60-61
Author(s):  
Kazuo Ishizuka
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Transmission Function ◽  
Incident Beam ◽  
Optical Microscope ◽  
Strong Interactions ◽  
Small Range ◽  
Specimen Thickness ◽  
Beam Direction ◽  
Diffracted Waves

It is well known that taking into account spacial and temporal coherency of illumination as well as the wave aberration is important to interpret an image of a high-resolution electron microscope (HREM). This occues, because coherency of incident electrons restricts transmission of image information. Due to its large spherical and chromatic aberrations, the electron microscope requires higher coherency than the optical microscope. On an application of HREM for a strong scattering object, we have to estimate the contribution of the interference between the diffracted waves on an image formation. The contribution of each pair of diffracted waves may be properly represented by the transmission cross coefficients (TCC) between these waves. In this report, we will show an improved form of the TCC including second order derivatives, and compare it with the first order TCC.In the electron microscope the specimen is illuminated by quasi monochromatic electrons having a small range of illumination directions. Thus, the image intensity for each energy and each incident direction should be summed to give an intensity to be observed. However, this is a time consuming process, if the ranges of incident energy and/or illumination direction are large. To avoid this difficulty, we can use the TCC by assuming that a transmission function of the specimen does not depend on the incident beam direction. This is not always true, because dynamical scattering is important owing to strong interactions of electrons with the specimen. However, in the case of HREM, both the specimen thickness and the illumination angle should be small. Therefore we may neglect the dependency of the transmission function on the incident beam direction.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

Atomic structure of [0001]-tilt grain boundaries in ZnO:  A high-resolution TEM study of fiber-textured thin films

2004 ◽  
Vol 70 (12) ◽  
Author(s):  
Fumiyasu Oba ◽  
Hiromichi Ohta ◽  
Yukio Sato ◽  
Hideo Hosono ◽  
Takahisa Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
High Resolution Tem

High-resolution quantitative X-ray microanalysis of Nb/AI multilayer thin films using the ζ-factor approach

1999 ◽  
Vol 79 (6) ◽  
pp. 1423-1442 ◽  
Author(s):  
G. Lucadamo ◽  
M. Watanabe ◽  
K. Barmak ◽  
D. B. Williams ◽  
C. Michaelsen ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Multilayer Thin Films ◽  
X Ray

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

Cathode luminescence characteristics of ZnGa2O4 phosphor thin films with the doped activator

2007 ◽  
Vol 126 (2) ◽  
pp. 359-364 ◽  
Author(s):  
Hyung-Wook Choi ◽  
Beom-Joo Hong ◽  
Seung-Kyu Lee ◽  
Kyung-Hwan Kim ◽  
Yong-Seo Park
Keyword(s):  
Thin Films ◽  
Cathode Luminescence ◽  
Luminescence Characteristics
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