Cathode luminescence characteristics of ZnGa2O4 phosphor thin films with the doped activator

2007 ◽  
Vol 126 (2) ◽  
pp. 359-364 ◽  
Author(s):  
Hyung-Wook Choi ◽  
Beom-Joo Hong ◽  
Seung-Kyu Lee ◽  
Kyung-Hwan Kim ◽  
Yong-Seo Park
Keyword(s):  
Thin Films ◽  
Cathode Luminescence ◽  
Luminescence Characteristics

Enhanced Luminescence Characteristics of Mesophase Silica Thin Films Doped with In-Situ-Formed Rare Earth Complexes

2016 ◽  
Vol 8 (1) ◽  
pp. 122-127 ◽  
Author(s):  
Sang Hoon Choi ◽  
Seok-Jun Seo ◽  
Dan Zhao ◽  
Kyoung-Tae Park ◽  
Bum Sung Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Rare Earth Complexes ◽  
Silica Thin Films ◽  
Enhanced Luminescence ◽  
Luminescence Characteristics

Luminescence characteristics of the LPE-grown undoped and In-doped ZnO thin films and bulk single crystals

2007 ◽  
Vol 4 (3) ◽  
pp. 942-945 ◽  
Author(s):  
J. Pejchal ◽  
Y. Kagamitani ◽  
D. Ehrentraut ◽  
H. Sato ◽  
H. Odaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Zno Thin Films ◽  
Bulk Single Crystals ◽  
Doped Zno ◽  
Luminescence Characteristics

Luminescence characteristics of Eu-doped GdVO4 thin films grown by pulsed-laser deposition

2005 ◽  
Vol 23 (4) ◽  
pp. 1124-1127 ◽  
Author(s):  
S. S. Yi ◽  
J. S. Bae ◽  
K. S. Shim ◽  
B. K. Moon ◽  
J. H. Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Luminescence Characteristics

Luminescence characteristics of Er-doped GaN semiconductor thin films

2000 ◽  
Vol 300-301 ◽  
pp. 207-213 ◽  
Author(s):  
J.M Zavada ◽  
Myo Thaik ◽  
U Hömmerich ◽  
J.D MacKenzie ◽  
C.R Abernathy ◽  
...  
Keyword(s):  
Thin Films ◽  
Semiconductor Thin Films ◽  
Er Doped ◽  
Luminescence Characteristics

scholarly journals Оптические и фотоэлектрические свойства тонких пленок GaS и гетероструктуры GaS/InSe

2019 ◽  
Vol 126 (5) ◽  
pp. 538
Author(s):  
А.Г. Гусейнов ◽  
В.М. Салманов ◽  
Р.М. Мамедов ◽  
А.А. Салманова ◽  
Ф.М. Ахмедова
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Force Microscopy ◽  
Photoelectric Properties ◽  
Atomic Force ◽  
Current Voltage ◽  
Luminescence Characteristics

AbstractGaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p -GaS/ n -InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p -GaS/ n -InSe heterojunctions have been experimentally investigated.

ChemInform Abstract: Luminescence Characteristics of Er-Doped GaN Semiconductor Thin Films

ChemInform ◽  
2010 ◽  
Vol 31 (25) ◽  
pp. no-no
Author(s):  
J. M. Zavada ◽  
Myo Thaik ◽  
U. Hoemmerich ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Thin Films ◽  
Semiconductor Thin Films ◽  
Er Doped ◽  
Luminescence Characteristics

Structural, electrical, and luminescence characteristics of vacuum-annealed epitaxial (Ba,La)SnO3 thin films

2015 ◽  
Vol 11 (4) ◽  
pp. 565-571 ◽  
Author(s):  
G. Anoop ◽  
Eun Young Park ◽  
Sungsu Lee ◽  
Ji Young Jo
Keyword(s):  
Thin Films ◽  
Luminescence Characteristics
Sign in / Sign up

Export Citation Format

Share Document