scholarly journals Room-temperature single photon emitters in cubic boron nitride nanocrystals

2020 ◽  
Vol 10 (4) ◽  
pp. 843
Author(s):  
Gabriel I. López-Morales ◽  
Aziza Almanakly ◽  
Sitakanta Satapathy ◽  
Nicholas V. Proscia ◽  
Harishankar Jayakumar ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Single Photon ◽  
Cubic Boron Nitride ◽  
Single Photon Emitters

scholarly journals Transferable room-temperature single-photon emitters in hexagonal boron nitride grown by molecular beam epitaxy

AIP Advances ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 115101
Author(s):  
Chao Lyu ◽  
Fang Liu ◽  
Zhihao Zang ◽  
Tingting Wang ◽  
Yanping Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Room Temperature ◽  
Molecular Beam ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Single Photon Emitters

scholarly journals First-Principles Identification of Single Photon Emitters Based on Carbon Clusters in Hexagonal Boron Nitride

2021 ◽  
Vol 125 (6) ◽  
pp. 1325-1335 ◽  
Author(s):  
Cesar Jara ◽  
Tomáš Rauch ◽  
Silvana Botti ◽  
Miguel A. L. Marques ◽  
Ariel Norambuena ◽  
...  
Keyword(s):  
Boron Nitride ◽  
First Principles ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Carbon Clusters ◽  
Single Photon Emitters

scholarly journals Radiative properties of quantum emitters in boron nitride from excited state calculations and Bayesian analysis

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Shiyuan Gao ◽  
Hsiao-Yi Chen ◽  
Marco Bernardi
Keyword(s):  
Boron Nitride ◽  
Density Functional ◽  
Single Photon ◽  
Radiative Lifetime ◽  
Radiative Properties ◽  
Data Set ◽  
Radiative Lifetimes ◽  
Emission Energy ◽  
Single Photon Emitters ◽  
Quantum Emitters

AbstractPoint defects in hexagonal boron nitride (hBN) have attracted growing attention as bright single-photon emitters. However, understanding of their atomic structure and radiative properties remains incomplete. Here we study the excited states and radiative lifetimes of over 20 native defects and carbon or oxygen impurities in hBN using ab initio density functional theory and GW plus Bethe-Salpeter equation calculations, generating a large data set of their emission energy, polarization and lifetime. We find a wide variability across quantum emitters, with exciton energies ranging from 0.3 to 4 eV and radiative lifetimes from ns to ms for different defect structures. Through a Bayesian statistical analysis, we identify various high-likelihood charge-neutral defect emitters, among which the native VNNB defect is predicted to possess emission energy and radiative lifetime in agreement with experiments. Our work advances the microscopic understanding of hBN single-photon emitters and introduces a computational framework to characterize and identify quantum emitters in 2D materials.

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

Single-Photon Emitters in Boron Nitride Nanococoons

Nano Letters ◽  
2018 ◽  
Vol 18 (4) ◽  
pp. 2683-2688 ◽  
Author(s):  
Joshua Ziegler ◽  
Andrew Blaikie ◽  
Aidin Fathalizadeh ◽  
David Miller ◽  
Fehmi S. Yasin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Single Photon Emitters

Photoinduced Modification of Single-Photon Emitters in Hexagonal Boron Nitride

ACS Photonics ◽  
2016 ◽  
Vol 3 (12) ◽  
pp. 2490-2496 ◽  
Author(s):  
Zav Shotan ◽  
Harishankar Jayakumar ◽  
Christopher R. Considine ◽  
Mažena Mackoit ◽  
Helmut Fedder ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Single Photon Emitters

scholarly journals Chemical Vapour Deposition of Hexagonal Boron Nitride for Two Dimensional Electronics

2018 ◽  
Vol 3 (3) ◽  
pp. 27-34 ◽  
Author(s):  
Balaji Sompalle ◽  
Jérôme Borme ◽  
Fátima Cerqueira ◽  
Tangyou Sun ◽  
Rui Campos ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Protective Coatings ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Single Photon Emitters ◽  
Potential Applications ◽  
Grown Graphene

Hexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene.

scholarly journals Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride

Science ◽  
2020 ◽  
Vol 367 (6477) ◽  
pp. 555-559 ◽  
Author(s):  
Ke Chen ◽  
Bai Song ◽  
Navaneetha K. Ravichandran ◽  
Qiye Zheng ◽  
Xi Chen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Boron Nitride ◽  
Thermal Management ◽  
High Power ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Wide Bandgap ◽  
Boron Isotopes ◽  
Fundamental Interest ◽  
Boron Phosphide

Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.

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