scholarly journals High-resolution spectroscopy and laser frequency stabilization using a narrow-linewidth planar-waveguide external cavity diode laser at 1063  nm

2019 ◽  
Vol 45 (1) ◽  
pp. 129 ◽  
Author(s):  
Kazumichi Yoshii ◽  
Haruki Sakagami ◽  
Hiroki Yamamoto ◽  
Sho Okubo ◽  
Hajime Inaba ◽  
...  
Keyword(s):  
High Resolution ◽  
Diode Laser ◽  
Planar Waveguide ◽  
External Cavity ◽  
Laser Frequency ◽  
Frequency Stabilization ◽  
External Cavity Diode Laser ◽  
High Resolution Spectroscopy ◽  
Narrow Linewidth ◽  
Laser Frequency Stabilization

The Effects of Temperature, Injection Current and Optical Feedback on the Frequency Stabilization of External Cavity Diode Laser

2014 ◽  
Vol 979 ◽  
pp. 459-462
Author(s):  
N. Srisuai ◽  
N. Chattrapiban ◽  
W. Rakreungdet
Keyword(s):  
Diode Laser ◽  
Laser Cooling ◽  
Optical Feedback ◽  
External Cavity ◽  
Single Mode ◽  
Laser Frequency ◽  
Injection Current ◽  
External Cavity Diode Laser ◽  
High Resolution Spectroscopy ◽  
Single Mode Laser

A frequency-stabilized diode laser is widely used for applications in laser cooling and high-resolution spectroscopy. In this work, the 780-nm external cavity diode laser was constructed and subsequently frequency-controlled by three parameters, i.e., temperature, injection current and optical feedback. The laser frequency was measured with respect to the 5S1/2 → 5P3/2 (D2-lines) transition of Rubidium, while the laser mode was characterized by a Fabry-Perot interferometer. The laser temperature was passively controlled to a single value between 20 ̊C and 25 ̊C while the injection current was investigated in combination with course and fine adjustments of optical feedback. Only data relevant to a single-mode laser operation was collected. It was found that as the current increased, the laser frequency shifted linearly with slopes approximately 0.5-0.8 GHz/mA. Optical feedback from the external cavity was tuned by the voltage applied to the piezoelectric transducer, yielding a linear frequency response of approximately 0.2 GHz/V. The measured parameters were rearranged to represent the island of stability of the laser, suggesting suitable conditions that yielded single-mode operation, at a desirable laser frequency. The results were important for a design of an active feedback, in order to further reduce the frequency linewidth and intensity noise of the laser.

Automatic Frequency Stabilization System of External Cavity Diode Laser Based on Digital Signal Processing Technology

2017 ◽  
Vol 37 (9) ◽  
pp. 0914002
Author(s):  
项静峰 Xiang Jingfeng ◽  
王利国 Wang Liguo ◽  
李 琳 Li Lin ◽  
吕德胜 Lü Desheng ◽  
刘 亮 Liu Liang
Keyword(s):  
Signal Processing ◽  
Digital Signal Processing ◽  
Diode Laser ◽  
External Cavity ◽  
Digital Signal ◽  
Frequency Stabilization ◽  
Processing Technology ◽  
External Cavity Diode Laser ◽  
Automatic Frequency ◽  
Stabilization System

Broad bandwidth interference filter-stabilized external cavity diode laser with narrow linewidth below 100 kHz

2018 ◽  
Vol 27 (1) ◽  
pp. 014204
Author(s):  
Guan-Zhong Pan ◽  
Bao-Lu Guan ◽  
Chen Xu ◽  
Peng-Tao Li ◽  
Jia-Wei Yang ◽  
...  
Keyword(s):  
Diode Laser ◽  
External Cavity ◽  
Interference Filter ◽  
External Cavity Diode Laser ◽  
Narrow Linewidth ◽  
Broad Bandwidth

A Micromachined Silicon Flexure for Tunable External Cavity Diode Laser

2007 ◽  
Author(s):  
Ho-Chiao Chuang ◽  
Ricardo Jime´nez-Marti´nez ◽  
Simon Braun ◽  
Dana Z. Anderson ◽  
Victor M. Bright
Keyword(s):  
Diode Laser ◽  
Optical Feedback ◽  
Laser System ◽  
External Cavity ◽  
Threshold Current ◽  
Laser Frequency ◽  
External Cavity Diode Laser ◽  
Laser Design ◽  
Current Reduction ◽  
Reflection Grating

We present a novel external cavity diode laser design developed for atomic physics which employs a micromachined silicon flexure to sweep the laser frequency and a volume holographic reflection grating (VHG) to provide the optical feedback. The advantages of using a silicon flexure are its simple microfabrication process and reduction of the overall size of the laser system. The results demonstrate an optimized threshold current reduction from 59mA to 43mA, a frequency sweeping range of 2.069 GHz, and 87Rb, 85Rb (Rubidium) D2 line absorption at 780 nm.

Frequency Stabilization of the Diode Laser to the Extra Reference Cavity

2012 ◽  
Vol 198-199 ◽  
pp. 1235-1240
Author(s):  
Xiao Dong Liu ◽  
Hai Dong Lei ◽  
Jian Jun Zhang
Keyword(s):  
Semiconductor Laser ◽  
Diode Laser ◽  
Laser Frequency ◽  
Frequency Stabilization ◽  
Resonance Peak ◽  
Experimental Setup ◽  
Laser Frequency Stabilization ◽  
Reference Cavity ◽  
Fabry Perot ◽  
Important Study

The Semiconductor laser frequency stabilization is the important study topic because of its increasing popular. We introduce a simply experimental setup method of the frequency stabilization of a 780 nm diode laser by only a tiny current in the laser audio modulation, photodiode receiver, and locking the transmission peaks. Use this method, the laser can be locked to the resonance peak of the Fabry-Perot cavity. The linewidth of laser is below 400 kHz, and it runs continually above 3 hours.

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