Field-programmable gate array based locking circuit for external cavity diode laser frequency stabilization

2011 ◽  
Vol 82 (10) ◽  
pp. 103103 ◽  
Author(s):  
Arne Schwettmann ◽  
Jonathon Sedlacek ◽  
James P. Shaffer
Keyword(s):  
Diode Laser ◽  
Field Programmable Gate Array ◽  
External Cavity ◽  
Laser Frequency ◽  
Frequency Stabilization ◽  
External Cavity Diode Laser ◽  
Laser Frequency Stabilization ◽  
Field Programmable ◽  
Gate Array

Automatic Frequency Stabilization System of External Cavity Diode Laser Based on Digital Signal Processing Technology

2017 ◽  
Vol 37 (9) ◽  
pp. 0914002
Author(s):  
项静峰 Xiang Jingfeng ◽  
王利国 Wang Liguo ◽  
李 琳 Li Lin ◽  
吕德胜 Lü Desheng ◽  
刘 亮 Liu Liang
Keyword(s):  
Signal Processing ◽  
Digital Signal Processing ◽  
Diode Laser ◽  
External Cavity ◽  
Digital Signal ◽  
Frequency Stabilization ◽  
Processing Technology ◽  
External Cavity Diode Laser ◽  
Automatic Frequency ◽  
Stabilization System

A Micromachined Silicon Flexure for Tunable External Cavity Diode Laser

2007 ◽  
Author(s):  
Ho-Chiao Chuang ◽  
Ricardo Jime´nez-Marti´nez ◽  
Simon Braun ◽  
Dana Z. Anderson ◽  
Victor M. Bright
Keyword(s):  
Diode Laser ◽  
Optical Feedback ◽  
Laser System ◽  
External Cavity ◽  
Threshold Current ◽  
Laser Frequency ◽  
External Cavity Diode Laser ◽  
Laser Design ◽  
Current Reduction ◽  
Reflection Grating

We present a novel external cavity diode laser design developed for atomic physics which employs a micromachined silicon flexure to sweep the laser frequency and a volume holographic reflection grating (VHG) to provide the optical feedback. The advantages of using a silicon flexure are its simple microfabrication process and reduction of the overall size of the laser system. The results demonstrate an optimized threshold current reduction from 59mA to 43mA, a frequency sweeping range of 2.069 GHz, and 87Rb, 85Rb (Rubidium) D2 line absorption at 780 nm.

Frequency Stabilization of the Diode Laser to the Extra Reference Cavity

2012 ◽  
Vol 198-199 ◽  
pp. 1235-1240
Author(s):  
Xiao Dong Liu ◽  
Hai Dong Lei ◽  
Jian Jun Zhang
Keyword(s):  
Semiconductor Laser ◽  
Diode Laser ◽  
Laser Frequency ◽  
Frequency Stabilization ◽  
Resonance Peak ◽  
Experimental Setup ◽  
Laser Frequency Stabilization ◽  
Reference Cavity ◽  
Fabry Perot ◽  
Important Study

The Semiconductor laser frequency stabilization is the important study topic because of its increasing popular. We introduce a simply experimental setup method of the frequency stabilization of a 780 nm diode laser by only a tiny current in the laser audio modulation, photodiode receiver, and locking the transmission peaks. Use this method, the laser can be locked to the resonance peak of the Fabry-Perot cavity. The linewidth of laser is below 400 kHz, and it runs continually above 3 hours.

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