Optical analysis of the refractive index and birefringence of hexagonal boron nitride from the visible to near-infrared

2019 ◽  
Vol 44 (15) ◽  
pp. 3797 ◽  
Author(s):  
Yoonhyuk Rah ◽  
Yeonghoon Jin ◽  
Sejeong Kim ◽  
Kyoungsik Yu
Keyword(s):  
Refractive Index ◽  
Boron Nitride ◽  
Near Infrared ◽  
Hexagonal Boron Nitride ◽  
Optical Analysis

Refractive Index Dispersion of Hexagonal Boron Nitride in the Visible and Near‐Infrared

2018 ◽  
Vol 256 (6) ◽  
pp. 1800417 ◽  
Author(s):  
Seong‐Yeon Lee ◽  
Tae‐Young Jeong ◽  
Suyong Jung ◽  
Ki‐Ju Yee
Keyword(s):  
Refractive Index ◽  
Boron Nitride ◽  
Near Infrared ◽  
Hexagonal Boron Nitride ◽  
Refractive Index Dispersion

scholarly journals Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1373
Author(s):  
Fadis F. Murzakhanov ◽  
Boris V. Yavkin ◽  
Georgiy V. Mamin ◽  
Sergei B. Orlinskii ◽  
Ivan E. Mumdzhi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Irradiation ◽  
Near Infrared ◽  
Hexagonal Boron Nitride ◽  
Optical Excitation ◽  
High Energy ◽  
Infrared Range ◽  
Zero Field ◽  
Zero Field Splitting ◽  
Spin Resonance

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.

scholarly journals Midgap radiative centers in carbon-enriched hexagonal boron nitride

2020 ◽  
Vol 117 (24) ◽  
pp. 13214-13219 ◽  
Author(s):  
Maciej Koperski ◽  
Diana Vaclavkova ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Kostya S. Novoselov ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Near Infrared ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Luminescence Spectra ◽  
Energy Structure ◽  
Defect States ◽  
Wide Bandgap Material ◽  
Single Photon Emitters ◽  
Far Ultraviolet

When serving as a protection tissue and/or inducing a periodic lateral modulation for/in atomically thin crystals, hexagonal boron nitride (hBN) has revolutionized the research on van der Waals heterostructures. By itself, hBN appears as an emergent wide-bandgap material, which, importantly, can be optically bright in the far-ultraviolet range and which frequently displays midgap defect-related centers of yet-unclear origin, but, interestingly, acting as single-photon emitters. Controlling the hBN doping is of particular interest in view of the possible practical use of this material. Here, we demonstrate that enriching hBN with carbon (C) activates an optical response of this material in the form of a series of well-defined resonances in visible and near-infrared regions, which appear in the luminescence spectra measured under below-bandgap excitation. Two, qualitatively different, C-related radiative centers are identified: One follows the Franck–Condon principle that describes transitions between two defect states with emission/annihilation of optical phonons, and the other shows atomic-like resonances characteristic of intradefect transitions. With a detailed characterization of the energy structure and emission dynamics of these radiative centers, we contribute to the development of controlled doping of hBN with midgap centers.

scholarly journals Observation of near-infrared sub-Poissonian photon emission in hexagonal boron nitride at room temperature

APL Photonics ◽  
2020 ◽  
Vol 5 (7) ◽  
pp. 076103
Author(s):  
Robin Camphausen ◽  
Loris Marini ◽  
Sherif Abdulkader Tawfik ◽  
Toan Trong Tran ◽  
Michael J. Ford ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Near Infrared ◽  
Hexagonal Boron Nitride ◽  
Photon Emission

Preparation of Boron Nitride Films by Rf Reactive Sputtering

1991 ◽  
Vol 228 ◽  
Author(s):  
P. K. Banerjee ◽  
B. Chaterjee ◽  
J. S. Kim ◽  
S. S. Mitra
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Ir Spectroscopy ◽  
Boron Nitride ◽  
Electron Spectroscopy ◽  
Hexagonal Boron Nitride ◽  
Reactive Sputtering ◽  
Optical Characteristics ◽  
X Ray ◽  
Boron Nitride Films

ABSTRACTBoron nitride films were deposited by rf reactive sputtering. The composition of the film was determined by X-ray photo-electron spectroscopy(XPS). Optical properties of boron nitride were studied by IR spectroscopy. Resultant films showed optical characteristics similar to those of hexagonal boron nitride. The ratio of boron to nitrogen was varied from 3.11 to 1.45 by varying the amount of nitrogen. Resulting films have refractive index in the range of 2.05 – 3.21.

scholarly journals Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3203
Author(s):  
Chen Cheng ◽  
Ziqi Li ◽  
Ningning Dong ◽  
Rang Li ◽  
Jun Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Density Functional ◽  
Near Infrared ◽  
Hexagonal Boron Nitride ◽  
Modulation Depth ◽  
Wide Band ◽  
Mode Locking ◽  
Laser Generation ◽  
Saturable Absorption ◽  
Infrared Band

Defect-induced phenomena in 2D materials has received increasing interest among researchers due to the novel properties correlated with precise modification of materials. We performed a study of the nonlinear saturable absorption of the boron-atom-vacancy defective hexagonal boron nitride (h-BN) thin film at a wavelength of ~1 μm and its applications in ultrafast laser generation. The h-BN is with wide band gap of ~6 eV. Our investigation shows that the defective h-BN has a wide absorption band from visible to near infrared regimes. First-principle calculations based on density functional theory (DFT) indicate that optical property changes may be attributed to the boron-vacancy-related defects. The photoluminescence spectrum shows a strong emission peak at ~1.79 eV. The ultrafast Z-scan measurement shows saturable absorbance response has been detected for the defective h-BN with saturation intensity of ~1.03 GW/cm2 and modulation depth of 1.1%. In addition, the defective h-BN has been applied as a new saturable absorber (SA) to generate laser pulses through the passively Q-switched mode-locking configuration. Based on a Nd:YAG waveguide platform, 8.7 GHz repetition rate and 55 ps pulse duration of the waveguide laser have been achieved. Our results suggest potential applications of defective h-BN for ultrafast lasing and integrated photonics.

Marcus-Hush Theory Revealed by Electron Tunneling Through Hexagonal Boron Nitride

2019 ◽  
Author(s):  
Matěj Velický ◽  
Sheng Hu ◽  
Colin R. Woods ◽  
Peter S. Toth ◽  
Viktor Zólyomi ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Boron Nitride ◽  
Electron Tunneling ◽  
Hexagonal Boron Nitride ◽  
Large Body ◽  
Liquid Solution ◽  
Limiting Current ◽  
Electron Transfer Rate Constant ◽  
Electrochemical Parameters ◽  
Voltammetric Measurements

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at microdisk electrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride barrier between a graphite electrode and redox levels in a liquid solution. This was achieved by the fabrication of microdisk electrodes with a typical diameter of 5 µm. Analysis of voltammetric measurements, using two common redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They show a significant departure from the Butler-Volmer behavior in a clear manifestation of the Marcus-Hush theory of electron transfer. In addition, our system provides a novel experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.

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