Refractive Index Dispersion of Hexagonal Boron Nitride in the Visible and Near‐Infrared

2018 ◽  
Vol 256 (6) ◽  
pp. 1800417 ◽  
Author(s):  
Seong‐Yeon Lee ◽  
Tae‐Young Jeong ◽  
Suyong Jung ◽  
Ki‐Ju Yee
Keyword(s):  
Refractive Index ◽  
Boron Nitride ◽  
Near Infrared ◽  
Hexagonal Boron Nitride ◽  
Refractive Index Dispersion

scholarly journals Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1373
Author(s):  
Fadis F. Murzakhanov ◽  
Boris V. Yavkin ◽  
Georgiy V. Mamin ◽  
Sergei B. Orlinskii ◽  
Ivan E. Mumdzhi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Irradiation ◽  
Near Infrared ◽  
Hexagonal Boron Nitride ◽  
Optical Excitation ◽  
High Energy ◽  
Infrared Range ◽  
Zero Field ◽  
Zero Field Splitting ◽  
Spin Resonance

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.

scholarly journals Midgap radiative centers in carbon-enriched hexagonal boron nitride

2020 ◽  
Vol 117 (24) ◽  
pp. 13214-13219 ◽  
Author(s):  
Maciej Koperski ◽  
Diana Vaclavkova ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Kostya S. Novoselov ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Near Infrared ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Luminescence Spectra ◽  
Energy Structure ◽  
Defect States ◽  
Wide Bandgap Material ◽  
Single Photon Emitters ◽  
Far Ultraviolet

When serving as a protection tissue and/or inducing a periodic lateral modulation for/in atomically thin crystals, hexagonal boron nitride (hBN) has revolutionized the research on van der Waals heterostructures. By itself, hBN appears as an emergent wide-bandgap material, which, importantly, can be optically bright in the far-ultraviolet range and which frequently displays midgap defect-related centers of yet-unclear origin, but, interestingly, acting as single-photon emitters. Controlling the hBN doping is of particular interest in view of the possible practical use of this material. Here, we demonstrate that enriching hBN with carbon (C) activates an optical response of this material in the form of a series of well-defined resonances in visible and near-infrared regions, which appear in the luminescence spectra measured under below-bandgap excitation. Two, qualitatively different, C-related radiative centers are identified: One follows the Franck–Condon principle that describes transitions between two defect states with emission/annihilation of optical phonons, and the other shows atomic-like resonances characteristic of intradefect transitions. With a detailed characterization of the energy structure and emission dynamics of these radiative centers, we contribute to the development of controlled doping of hBN with midgap centers.

scholarly journals Observation of near-infrared sub-Poissonian photon emission in hexagonal boron nitride at room temperature

APL Photonics ◽  
2020 ◽  
Vol 5 (7) ◽  
pp. 076103
Author(s):  
Robin Camphausen ◽  
Loris Marini ◽  
Sherif Abdulkader Tawfik ◽  
Toan Trong Tran ◽  
Michael J. Ford ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Room Temperature ◽  
Near Infrared ◽  
Hexagonal Boron Nitride ◽  
Photon Emission

Near infrared nonlinear refractive index dispersion of metallic and semiconducting single-wall carbon nanotube colloids

Carbon ◽  
2014 ◽  
Vol 77 ◽  
pp. 939-946 ◽  
Author(s):  
Antonio C. Brandão-Silva ◽  
Rogério M.A. Lima ◽  
Cristiano Fantini ◽  
Alcenísio Jesus-Silva ◽  
Márcio A.R.C. Alencar ◽  
...  
Keyword(s):  
Refractive Index ◽  
Carbon Nanotube ◽  
Nonlinear Refractive Index ◽  
Near Infrared ◽  
Refractive Index Dispersion ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon

Preparation of Boron Nitride Films by Rf Reactive Sputtering

1991 ◽  
Vol 228 ◽  
Author(s):  
P. K. Banerjee ◽  
B. Chaterjee ◽  
J. S. Kim ◽  
S. S. Mitra
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Ir Spectroscopy ◽  
Boron Nitride ◽  
Electron Spectroscopy ◽  
Hexagonal Boron Nitride ◽  
Reactive Sputtering ◽  
Optical Characteristics ◽  
X Ray ◽  
Boron Nitride Films

ABSTRACTBoron nitride films were deposited by rf reactive sputtering. The composition of the film was determined by X-ray photo-electron spectroscopy(XPS). Optical properties of boron nitride were studied by IR spectroscopy. Resultant films showed optical characteristics similar to those of hexagonal boron nitride. The ratio of boron to nitrogen was varied from 3.11 to 1.45 by varying the amount of nitrogen. Resulting films have refractive index in the range of 2.05 – 3.21.

scholarly journals A Fiber-Optic Gas Sensor and Method for the Measurement of Refractive Index Dispersion in NIR

Sensors ◽  
2020 ◽  
Vol 20 (13) ◽  
pp. 3717 ◽  
Author(s):  
Matej Njegovec ◽  
Denis Donlagic
Keyword(s):  
Refractive Index ◽  
Optical Fibers ◽  
Near Infrared ◽  
Optical Design ◽  
Infrared Region ◽  
Refractive Index Dispersion ◽  
Measurement Resolution ◽  
Fabry Perot ◽  
Good Potential ◽  
Cost Efficient

This paper presents a method for gas concentration determination based on the measurement of the refractive index dispersion of a gas near the gas resonance in the near-infrared region (NIR). The gas refractive index dispersion line shape is reconstructed from the variation in the spectral interference fringes’ periods, which are generated by a low-finesse Fabry-Perot interferometer during the DFB diode’s linear-over-time optical frequency sweep around the gas resonance frequency. The entire sensing system was modeled and then verified experimentally, for an example of a low concentration methane-air mixture. We demonstrate experimentally a refractive index dispersion measurement resolution of 2 × 10−9 refractive index units (RIU), which corresponds to a change in methane concentration in air of 0.04 vol% at the resonant frequency of 181.285 THz (1653.7 nm). The experimental and modeling results show an excellent agreement. The presented system utilizes a very simple optical design and has good potential for the realization of cost-efficient gas sensors that can be operated remotely through standard telecom optical fibers.

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