scholarly journals β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

AIP Advances ◽  
2016 ◽  
Vol 6 (4) ◽  
pp. 045009 ◽  
Author(s):  
L. X. Qian ◽  
X. Z. Liu ◽  
T. Sheng ◽  
W. L. Zhang ◽  
Y. R. Li ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Deep Ultraviolet ◽  
Terminal Structure

Ultrasensitive Self-Powered Solar-Blind Deep-Ultraviolet Photodetector Based on All-Solid-State Polyaniline/MgZnO Bilayer

Small ◽  
2016 ◽  
Vol 12 (42) ◽  
pp. 5809-5816 ◽  
Author(s):  
Hongyu Chen ◽  
Pingping Yu ◽  
Zhenzhong Zhang ◽  
Feng Teng ◽  
Lingxia Zheng ◽  
...  
Keyword(s):  
Solid State ◽  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Deep Ultraviolet ◽  
Self Powered

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed

Nano Research ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1973-1979
Author(s):  
Di Wu ◽  
Zhihui Zhao ◽  
Wei Lu ◽  
Lukas Rogée ◽  
Longhui Zeng ◽  
...  
Keyword(s):  
Schottky Junction ◽  
Ultraviolet Photodetector ◽  
Highly Sensitive ◽  
Solar Blind ◽  
Deep Ultraviolet

High Detectivity Solar-Blind High-Temperature Deep-Ultraviolet Photodetector Based on Multi-Layered (l00) Facet-Orientedβ-Ga2O3Nanobelts

Small ◽  
2014 ◽  
Vol 10 (9) ◽  
pp. 1848-1856 ◽  
Author(s):  
Rujia Zou ◽  
Zhenyu Zhang ◽  
Qian Liu ◽  
Junqing Hu ◽  
Liwen Sang ◽  
...  
Keyword(s):  
High Temperature ◽  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Deep Ultraviolet

High-Performance Solar-Blind Deep Ultraviolet Photodetector Based on Individual Single-Crystalline Zn2GeO4Nanowire

2015 ◽  
Vol 26 (5) ◽  
pp. 704-712 ◽  
Author(s):  
Xing Zhou ◽  
Qi Zhang ◽  
Lin Gan ◽  
Xin Li ◽  
Huiqiao Li ◽  
...  
Keyword(s):  
High Performance ◽  
Ultraviolet Photodetector ◽  
Single Crystalline ◽  
Solar Blind ◽  
Deep Ultraviolet

β-Ga 2 O 3 solar-blind deep-ultraviolet photodetector based on annealed sapphire substrate

Vacuum ◽  
2017 ◽  
Vol 140 ◽  
pp. 106-110 ◽  
Author(s):  
L.X. Qian ◽  
Y. Wang ◽  
Z.H. Wu ◽  
T. Sheng ◽  
X.Z. Liu
Keyword(s):  
Sapphire Substrate ◽  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Deep Ultraviolet

Deep Ultraviolet Photodetector Based on Sulphur-Doped Cubic Boron Nitride Thin Film

2016 ◽  
Vol 879 ◽  
pp. 1117-1122 ◽  
Author(s):  
Yu Bo Li ◽  
Jian Wei Zhong ◽  
Li Ming Zhou ◽  
Chao Lun Sun ◽  
Xiao Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Blind Detection ◽  
Ultraviolet Photodetector ◽  
Metal Semiconductor Metal ◽  
Solar Blind ◽  
Deep Ultraviolet ◽  
Uv Response

Cubic boron nitride (c-BN) is a wide bandgap III-V compound semiconductor potentially useful for solar-blind photodetectors. This paper describes work on the use of Sulphur doping to adjust the bandgap of c-BN films prepared by plasma-enhanced chemical vapor deposition (PECVD). An S-doped c-BN film based metal-semiconductor-metal (MSM) solar-blind ultraviolet (SBUV) photodetector was successfully fabricated and its electro-optical properties were characterized. The photocurrent shows peak responsivity at 254nm with sharp cutoff wavelengths at 220 and 300 nm, respectively, which is appropriate for use in solar-blind detection. The maximum response reached 1.55×10-7 A/W/cm2 with a rejection ratio of more than three orders of magnitude. The high solar-blind region UV response could be attributed to the successful substitution of boron by Sulphur and the suppression of B vacancies. The experimental results show the same peak in response at around 254nm as is found in the theoretical analysis.

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