Near-infrared free-carrier absorption in silicon nanocrystals

2009 ◽  
Vol 34 (21) ◽  
pp. 3397 ◽  
Author(s):  
Rohan D. Kekatpure ◽  
Mark L. Brongersma
Keyword(s):  
Silicon Nanocrystals ◽  
Near Infrared ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption

scholarly journals Ultrafast Broadband Nonlinear Optical Response in Co-Doped Sb2Se3 Nanofilms at Near-Infrared

2021 ◽  
Vol 8 ◽  
Author(s):  
Di Sun ◽  
Yu Fang ◽  
Xiaoyan Yan ◽  
Wen Shan ◽  
Wenjun Sun ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Near Infrared ◽  
Optical Response ◽  
Free Carrier ◽  
Nonlinear Optical Response ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Ultrafast Carrier ◽  
Carrier Absorption ◽  
Co Doped

Transition metal-doped Sb2Se3 has become a heated topic caused by the strong nonlinear optical response and the ultrafast response time at high laser excitation. In this paper, the Co-doped Sb2Se3 with different doping amount (0.5, 1.0, and 1.5 W) nanofilms were prepared by magnetron sputtering technology, and the nonlinear behavior of Co-doped Sb2Se3 nanofilms at near infrared were systematically studied. The results of the femtosecond Z-Scan experiment indicate that the Co-doped Sb2Se3 nanofilms exhibit broadband nonlinear response properties owing to the free carrier absorption, the Kerr refraction, the two-photon absorption, and the free carrier refraction. The nonlinear absorption coefficients of Co-doped Sb2Se3 nanofilms are from 3.0 × 10−9 to 2.03 × 10−8 m/ W under excitation at 800, 980, and 1,030 nm, and the nonlinear refractive index of the Co-doped Sb2Se3 nanofilms is from 4.0 × 10−16 to -3.89 × 10−15 m2/ W at 800, 980, and 1,030 nm. More importantly, Co-doped Sb2Se3 (1.5 W) nanofilm exhibits ultrafast carrier absorption (<1 ps) and a stronger transient absorption intensity of ΔOD > 6.3. The Co-doping content can controllably tune the crystalline degree, the ultrafast carrier absorption, the intensity of the reverse saturation absorption, the broadband nonlinear optical response, and the carrier relaxation time of Co-doped Sb2Se3 nanofilms. These results are sufficient to support their applications in broadband nonlinear photonic devices.

Combining Plasmonic Hot Carrier Generation with Free Carrier Absorption for High-Performance Near-Infrared Silicon-Based Photodetection

ACS Photonics ◽  
2018 ◽  
Vol 5 (9) ◽  
pp. 3472-3477 ◽  
Author(s):  
Mehbuba Tanzid ◽  
Arash Ahmadivand ◽  
Runmin Zhang ◽  
Ben Cerjan ◽  
Ali Sobhani ◽  
...  
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Generation ◽  
Hot Carrier ◽  
Carrier Absorption ◽  
Silicon Based

Near-infrared free carrier absorption enhancement of heavily doped silicon in all-dielectric metasurface

2020 ◽  
Vol 117 (13) ◽  
pp. 134101
Author(s):  
Honghao Yu ◽  
Qing Xiong ◽  
Hong Wang ◽  
Ye Zhang ◽  
Yi Wang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Free Carrier ◽  
Absorption Enhancement ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped ◽  
Dielectric Metasurface

Time-resolved Ellipsometry to Study Extreme Non-equilibrium Electron Dynamics in Nanostructured Semiconductors

2012 ◽  
Vol 1426 ◽  
pp. 395-400
Author(s):  
T. W. Roger ◽  
A. Kaplan
Keyword(s):  
Silicon Nanocrystals ◽  
Crystalline Silicon ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Electron Dynamics ◽  
Silicon Phase ◽  
Time Resolved ◽  
Pump Probe ◽  
Carrier Absorption ◽  
Nanostructured Semiconductors

ABSTRACTWe present a femtosecond pump-probe ellipsometer operating over a spectral range of 1.4 – 1.7 eV with a ∼50fs time resolution. The calibration and preliminary findings of the setup are discussed. We tested the apparatus on bulk crystalline silicon (not shown here) and on silicon nanocrystals embedded in an amorphous silicon phase. The ellipsometric angles (ψ, Δ) were determined as a function of time and wavelength. The results suggest that a simple Drude model of free carrier absorption is not sufficient to explain the findings.

scholarly journals Near-infrared free carrier absorption in heavily doped silicon

2014 ◽  
Vol 116 (6) ◽  
pp. 063106 ◽  
Author(s):  
Simeon C. Baker-Finch ◽  
Keith R. McIntosh ◽  
Di Yan ◽  
Kean Chern Fong ◽  
Teng C. Kho
Keyword(s):  
Near Infrared ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped

4-QAM OFDM Data Switching via Free Carrier Absorption in Si-Rich SiC Waveguide

2021 ◽  
Vol 27 (3) ◽  
pp. 1-11
Author(s):  
Yen-Wei Hsueh ◽  
Chih-Hsien Cheng ◽  
Cai-Syuan Fu ◽  
Huai-Yung Wang ◽  
Bo-Ji Huang ◽  
...  
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Data Switching

Free carrier absorption in heavily doped silicon layers

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped
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