Combining Plasmonic Hot Carrier Generation with Free Carrier Absorption for High-Performance Near-Infrared Silicon-Based Photodetection

ACS Photonics ◽  
2018 ◽  
Vol 5 (9) ◽  
pp. 3472-3477 ◽  
Author(s):  
Mehbuba Tanzid ◽  
Arash Ahmadivand ◽  
Runmin Zhang ◽  
Ben Cerjan ◽  
Ali Sobhani ◽  
...  
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Generation ◽  
Hot Carrier ◽  
Carrier Absorption ◽  
Silicon Based

TUNABLE ASYMMETRIC FANO LINESHAPES IN SILICON-BASED MICRORING RESONATORS WITH FEEDBACK

2011 ◽  
Vol 20 (03) ◽  
pp. 357-366 ◽  
Author(s):  
SANTHAD PITAKWONGSAPORN ◽  
SURASAK CHIANGGA
Keyword(s):  
Continuous Wave ◽  
Operating Regime ◽  
Free Carrier ◽  
Photon Absorption ◽  
Microring Resonators ◽  
Free Carrier Absorption ◽  
Coupling Coefficients ◽  
Linear Absorption ◽  
Carrier Absorption ◽  
Silicon Based

We theoretically examine the Fano lineshapes of silicon-based compound microring resonators consisting of a single resonator channel dropping filter linked to a loop as a feedback structure. All possible optical effects for the continuous-wave operating regime, such as linear absorption or scattering, two-photon absorption, free-carrier absorption and dispersion, thermo-optics, are simultaneously considered. We show that sharp Fano resonances can be tuned by variation in the coupling coefficients, length of feedback loop, effective free carrier lifetime and the temperature inside the device. Tunable Fano lineshapes open up opportunities for applications in sensing, computing, and communications.

scholarly journals Ultrafast Broadband Nonlinear Optical Response in Co-Doped Sb2Se3 Nanofilms at Near-Infrared

2021 ◽  
Vol 8 ◽  
Author(s):  
Di Sun ◽  
Yu Fang ◽  
Xiaoyan Yan ◽  
Wen Shan ◽  
Wenjun Sun ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Near Infrared ◽  
Optical Response ◽  
Free Carrier ◽  
Nonlinear Optical Response ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Ultrafast Carrier ◽  
Carrier Absorption ◽  
Co Doped

Transition metal-doped Sb2Se3 has become a heated topic caused by the strong nonlinear optical response and the ultrafast response time at high laser excitation. In this paper, the Co-doped Sb2Se3 with different doping amount (0.5, 1.0, and 1.5 W) nanofilms were prepared by magnetron sputtering technology, and the nonlinear behavior of Co-doped Sb2Se3 nanofilms at near infrared were systematically studied. The results of the femtosecond Z-Scan experiment indicate that the Co-doped Sb2Se3 nanofilms exhibit broadband nonlinear response properties owing to the free carrier absorption, the Kerr refraction, the two-photon absorption, and the free carrier refraction. The nonlinear absorption coefficients of Co-doped Sb2Se3 nanofilms are from 3.0 × 10−9 to 2.03 × 10−8 m/ W under excitation at 800, 980, and 1,030 nm, and the nonlinear refractive index of the Co-doped Sb2Se3 nanofilms is from 4.0 × 10−16 to -3.89 × 10−15 m2/ W at 800, 980, and 1,030 nm. More importantly, Co-doped Sb2Se3 (1.5 W) nanofilm exhibits ultrafast carrier absorption (<1 ps) and a stronger transient absorption intensity of ΔOD > 6.3. The Co-doping content can controllably tune the crystalline degree, the ultrafast carrier absorption, the intensity of the reverse saturation absorption, the broadband nonlinear optical response, and the carrier relaxation time of Co-doped Sb2Se3 nanofilms. These results are sufficient to support their applications in broadband nonlinear photonic devices.

Near-infrared free carrier absorption enhancement of heavily doped silicon in all-dielectric metasurface

2020 ◽  
Vol 117 (13) ◽  
pp. 134101
Author(s):  
Honghao Yu ◽  
Qing Xiong ◽  
Hong Wang ◽  
Ye Zhang ◽  
Yi Wang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Free Carrier ◽  
Absorption Enhancement ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped ◽  
Dielectric Metasurface

Optical waveguide intensity modulator in silicon, based on carrier injection in a Si1−xGex pin heterostructure

1996 ◽  
Vol 74 (S1) ◽  
pp. 29-31 ◽  
Author(s):  
C. Fernando ◽  
S. Janz ◽  
R. Normandin ◽  
J. P. Noël ◽  
N. G. Tarr ◽  
...  
Keyword(s):  
Optical Waveguide ◽  
Modulation Depth ◽  
Forward Bias ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Injection ◽  
Guided Mode ◽  
Carrier Absorption ◽  
Waveguide Modulator ◽  
Silicon Based

A Si1−xGex pin optical waveguide modulator operating at a wavelength of λ = 1.3 μm was designed and demonstrated. The free carrier absorption by carriers injected into the i region under high forward bias was used to attenuate the guided mode intensity. Numerical simulations indicate that this structure can operate at speeds up to 200 MHz. A maximum modulation depth of 85% was measured for a 2 mm long waveguide using a peak modulation current of 4200 A cm−2.

Near-infrared free-carrier absorption in silicon nanocrystals

2009 ◽  
Vol 34 (21) ◽  
pp. 3397 ◽  
Author(s):  
Rohan D. Kekatpure ◽  
Mark L. Brongersma
Keyword(s):  
Silicon Nanocrystals ◽  
Near Infrared ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption

scholarly journals Near-infrared free carrier absorption in heavily doped silicon

2014 ◽  
Vol 116 (6) ◽  
pp. 063106 ◽  
Author(s):  
Simeon C. Baker-Finch ◽  
Keith R. McIntosh ◽  
Di Yan ◽  
Kean Chern Fong ◽  
Teng C. Kho
Keyword(s):  
Near Infrared ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped

4-QAM OFDM Data Switching via Free Carrier Absorption in Si-Rich SiC Waveguide

2021 ◽  
Vol 27 (3) ◽  
pp. 1-11
Author(s):  
Yen-Wei Hsueh ◽  
Chih-Hsien Cheng ◽  
Cai-Syuan Fu ◽  
Huai-Yung Wang ◽  
Bo-Ji Huang ◽  
...  
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Data Switching
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