At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy

2007 ◽  
Vol 32 (13) ◽  
pp. 1875 ◽  
Author(s):  
Jingquan Lin ◽  
Nils Weber ◽  
Jochen Maul ◽  
Stefan Hendel ◽  
Karsten Rott ◽  
...  
2009 ◽  
Vol 80 (12) ◽  
pp. 123703 ◽  
Author(s):  
A. Mikkelsen ◽  
J. Schwenke ◽  
T. Fordell ◽  
G. Luo ◽  
K. Klünder ◽  
...  

2008 ◽  
Vol 16 (20) ◽  
pp. 15343 ◽  
Author(s):  
Jingquan Lin ◽  
Nils Weber ◽  
Matthias Escher ◽  
Jochen Maul ◽  
Hak-Seung Han ◽  
...  

Author(s):  
G. F. Rempfer

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.


Sign in / Sign up

Export Citation Format

Share Document