Stable low-loss proton-exchanged LiNbO_3 waveguide devices with no electro-optic degradation

1988 ◽  
Vol 13 (11) ◽  
pp. 1050 ◽  
Author(s):  
P. G. Suchoski ◽  
T. K. Findakly ◽  
F. J. Leonberger
Keyword(s):  
Low Loss ◽  
Waveguide Devices ◽  
Electro Optic

Applications of neutral impurity disordering in fabricating low-loss optical waveguides and integrated waveguide devices

1991 ◽  
Vol 23 (7) ◽  
pp. S941-S957 ◽  
Author(s):  
J. H. Marsh ◽  
S. I. Hansen ◽  
A. C. Bryce ◽  
R. M. De La Rue
Keyword(s):  
Optical Waveguides ◽  
Low Loss ◽  
Waveguide Devices ◽  
Neutral Impurity

scholarly journals Low-Loss, Silicon Integrated, Aluminum Nitride Photonic Circuits and Their Use for Electro-Optic Signal Processing

Nano Letters ◽  
2012 ◽  
Vol 12 (7) ◽  
pp. 3562-3568 ◽  
Author(s):  
Chi Xiong ◽  
Wolfram H. P. Pernice ◽  
Hong X. Tang
Keyword(s):  
Signal Processing ◽  
Aluminum Nitride ◽  
Low Loss ◽  
Photonic Circuits ◽  
Electro Optic

High Performance Hermetic Package For LiNbO 3 Electro-Optic Waveguide Devices

1989 ◽  
Author(s):  
K. R. Preston ◽  
B. M. Macdonald ◽  
R. A. Harmon ◽  
C. W. Ford ◽  
R. N. Shaw ◽  
...  
Keyword(s):  
High Performance ◽  
Waveguide Devices ◽  
Electro Optic ◽  
Optic Waveguide ◽  
Hermetic Package

Photonics on a Silicon Chip

2008 ◽  
Author(s):  
Michal Lipson ◽  
Sasikanth Manipatruni ◽  
Kyle Preston ◽  
Carl Poitras
Keyword(s):  
Low Power ◽  
Optical Interconnects ◽  
Wavelength Converters ◽  
Active Components ◽  
Low Loss ◽  
High Data ◽  
Electro Optic ◽  
All Optical ◽  
Power Switches ◽  
Small Footprint

Photonics on a silicon chip could enable a platform for monolithic integration of optics and microelectronics for applications of optical interconnects in which high data streams are required in a small footprint. In this talk I will review the challenges and achievement in the field of silicon photonics. Using highly confined photonic structures one can enhance the electro-optical and non-linearities properties of Silicon and enable ultra-compact and low power photonic components with very low loss. We have recently demonstrated several active components including GHz electro-optic low power switches and modulators, all-optical amplifiers and wavelength converters on silicon.

Epitaxially induced secondary grain growth in Ti:LiNbO3 optical waveguides

1989 ◽  
Vol 47 ◽  
pp. 424-425
Author(s):  
M. A. McCoy
Keyword(s):  
Electron Microscopy ◽  
Solid Solution ◽  
Transmission Electron Microscopy ◽  
Refractive Index ◽  
Lithium Niobate ◽  
Grain Growth ◽  
Optical Waveguides ◽  
Waveguide Devices ◽  
Transmission Electron ◽  
Electro Optic

Lithium niobate (LiNbO3) is one of the most promising materials for use in hybrid optical waveguide devices because of its high electro-optic coefficient and its availability as large single crystals. Optical waveguides in LiNbO3 are most commonly made by Ti indiffusion in which strips of Ti metal (between 10 and 100 nm thick) are deposited on a single crystal LiNbO3 substrate. The device is then heated to temperatures around 1000°C typically for 6 hours. During this time, the Ti diffuses into the LiNbO3 to form a Ti-rich LiNbO3 solid solution. This solid solution has a higher refractive index than the substrate and forms the waveguide region. Factors controlling the indiffusion process, however, are not very well understood and very little is known about the microstructural changes which occur during Ti indiffusion. In this study, the microstructure of Ti:LiNbO3 optical waveguides was examined as a function of time and temperature using transmission electron microscopy (TEM).

Sign in / Sign up

Export Citation Format

Share Document