Compact silicon-based DML Transmitter with Extinction Ratio improved for 40G TWDM PON OLT scenarios

2015 ◽  
Author(s):  
Qiang Zhang ◽  
Quan Cao ◽  
Shengmeng Fu ◽  
Ruiqiang Ji ◽  
Li Zeng
Keyword(s):  
Extinction Ratio ◽  
Silicon Based

CMOS compatible silicon-based Mach-Zehnder optical modulators with improved extinction ratio

2011 ◽  
Author(s):  
Zhiyong Li ◽  
Liang Zhou ◽  
Yingtao Hu ◽  
Xi Xiao ◽  
Yude Yu ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
Optical Modulators ◽  
Cmos Compatible ◽  
Silicon Based

scholarly journals Multilayer optical interconnects design: switching components and insertion loss reduction approach

2018 ◽  
Vol 69 (3) ◽  
pp. 226-232
Author(s):  
Mohammad Reza Mokhtari ◽  
Hamed Baghban ◽  
Hadi Soofi
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Extinction Ratio ◽  
Single Layer ◽  
Loss Reduction ◽  
Low Loss ◽  
Switched Networks ◽  
Average Loss ◽  
Switch Design ◽  
Silicon Based

Abstract The next generation of chip multi-processors point to the integration of thousands of processing cores, demanding high- performance interconnects, and growing the interest in optically interconnected networks. In this article we report on an interlayer silicon-based switch design that switches two channels simultaneously from an input waveguide into one of the two output ports. The introduced interlayer switch allows to design interconnects with previously unattainable functionality, higher performance and robustness, and smaller footprints with low insertion loss (< 1 dB), and high extinction ratio (> 18 dB). Interlayer switching combined with wavelength-routed and circuit-switched networks yield a low latency and low- loss interconnect architecture. Quantitative comparison between the proposed interconnect architecture and other reported structures in terms of loss, number of wavelengths and microring resonators reveals the proficiency of our design. For a 64-core interconnect implemented in 4 layers, the proposed architecture indicates an average loss reduction up to 42% and 43% with respect to single-layer lambda-router and GWOR.

scholarly journals Ultra-compact silicon nanophotonic modulator with broadband response

Nanophotonics ◽  
2012 ◽  
Vol 1 (1) ◽  
pp. 17-22 ◽  
Author(s):  
Volker J. Sorger ◽  
Norberto D. Lanzillotti-Kimura ◽  
Ren-Min Ma ◽  
Xiang Zhang
Keyword(s):  
Indium Tin Oxide ◽  
Extinction Ratio ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ambient Conditions ◽  
Seamless Integration ◽  
Pure Silicon ◽  
Electro Optic ◽  
Silicon Based ◽  
Electro Optic Modulator

AbstractElectro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley
Keyword(s):  
Corrosion Protection ◽  
Silicon Based

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

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