Silicon based tunable Fano resonance with ultrahigh slope rate and extinction ratio

2018 ◽  
Author(s):  
Yuan Yu ◽  
Xiaolong Liu ◽  
Xinliang Zhang
Keyword(s):  
Fano Resonance ◽  
Extinction Ratio ◽  
Silicon Based

CMOS compatible silicon-based Mach-Zehnder optical modulators with improved extinction ratio

2011 ◽  
Author(s):  
Zhiyong Li ◽  
Liang Zhou ◽  
Yingtao Hu ◽  
Xi Xiao ◽  
Yude Yu ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
Optical Modulators ◽  
Cmos Compatible ◽  
Silicon Based

Silicon‐Based Terahertz Meta‐Devices for Electrical Modulation of Fano Resonance and Transmission Amplitude

2020 ◽  
Vol 8 (19) ◽  
pp. 2000449 ◽  
Author(s):  
Jing Lou ◽  
Jiangang Liang ◽  
Ying Yu ◽  
Hua Ma ◽  
Ruisheng Yang ◽  
...  
Keyword(s):  
Fano Resonance ◽  
Transmission Amplitude ◽  
Electrical Modulation ◽  
Silicon Based

scholarly journals Multilayer optical interconnects design: switching components and insertion loss reduction approach

2018 ◽  
Vol 69 (3) ◽  
pp. 226-232
Author(s):  
Mohammad Reza Mokhtari ◽  
Hamed Baghban ◽  
Hadi Soofi
Keyword(s):  
Insertion Loss ◽  
High Performance ◽  
Extinction Ratio ◽  
Single Layer ◽  
Loss Reduction ◽  
Low Loss ◽  
Switched Networks ◽  
Average Loss ◽  
Switch Design ◽  
Silicon Based

Abstract The next generation of chip multi-processors point to the integration of thousands of processing cores, demanding high- performance interconnects, and growing the interest in optically interconnected networks. In this article we report on an interlayer silicon-based switch design that switches two channels simultaneously from an input waveguide into one of the two output ports. The introduced interlayer switch allows to design interconnects with previously unattainable functionality, higher performance and robustness, and smaller footprints with low insertion loss (< 1 dB), and high extinction ratio (> 18 dB). Interlayer switching combined with wavelength-routed and circuit-switched networks yield a low latency and low- loss interconnect architecture. Quantitative comparison between the proposed interconnect architecture and other reported structures in terms of loss, number of wavelengths and microring resonators reveals the proficiency of our design. For a 64-core interconnect implemented in 4 layers, the proposed architecture indicates an average loss reduction up to 42% and 43% with respect to single-layer lambda-router and GWOR.

scholarly journals Ultra-compact silicon nanophotonic modulator with broadband response

Nanophotonics ◽  
2012 ◽  
Vol 1 (1) ◽  
pp. 17-22 ◽  
Author(s):  
Volker J. Sorger ◽  
Norberto D. Lanzillotti-Kimura ◽  
Ren-Min Ma ◽  
Xiang Zhang
Keyword(s):  
Indium Tin Oxide ◽  
Extinction Ratio ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ambient Conditions ◽  
Seamless Integration ◽  
Pure Silicon ◽  
Electro Optic ◽  
Silicon Based ◽  
Electro Optic Modulator

AbstractElectro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the inefficient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which efficiently concentrates the optical modes’ electric field into a nanometer thin region comprised of an absorption coefficient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits.

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based
Sign in / Sign up

Export Citation Format

Share Document