Dynamic Compensation Technique for Improving Extinction Ratio of Silicon-based Optical Switch Driven by Carrier Injection Diode

2016 ◽  
Author(s):  
Mingle Liao ◽  
Baojian Wu ◽  
Wei Huang ◽  
Heng Zhou ◽  
Feng Wen ◽  
...  
Keyword(s):  
Optical Switch ◽  
Extinction Ratio ◽  
Carrier Injection ◽  
Dynamic Compensation ◽  
Compensation Technique ◽  
Silicon Based

CMOS compatible silicon-based Mach-Zehnder optical modulators with improved extinction ratio

2011 ◽  
Author(s):  
Zhiyong Li ◽  
Liang Zhou ◽  
Yingtao Hu ◽  
Xi Xiao ◽  
Yude Yu ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
Optical Modulators ◽  
Cmos Compatible ◽  
Silicon Based

scholarly journals Tunable Infrared Optical Switch Based on Vanadium Dioxide

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2988
Author(s):  
Qi Wang ◽  
Shijie Zhang ◽  
Chen Wang ◽  
Rui Li ◽  
Tianhan Cai ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Dioxide ◽  
Optical Switching ◽  
Modulation Depth ◽  
Optical Switch ◽  
Extinction Ratio ◽  
Infrared Region ◽  
Metallic Phase ◽  
Ultrafast Switching ◽  
Difference Time

A tunable infrared optical switch based on a plasmonic structure consisting of aluminum nanoarrays with a thin film of vanadium dioxide is proposed. This optical switch can realize arbitrary wavelength-selective optical switching in the mid-infrared region by altering the radii of the aluminum nanoarrays. Furthermore, since vanadium dioxide transforms from its low-temperature insulator phase to a high-temperature metallic phase when heated or applied voltage, the optical switch can achieve two-way switching of its “ON” and “OFF” modes. Finite-difference time-domain software is used to simulate the performance of the proposed infrared optical switch. Simulation results show that the switch offers excellent optical performances, that the modulation depth can reach up to 99.4%, and that the extinction ratio exceeds −22.16 dB. In addition, the phase transition time of vanadium dioxide is on the femtosecond scale, which means that this optical switch based on a vanadium dioxide thin film can be used for ultrafast switching.

Circular Polarization Control in Silicon-Based All-Optical Switch

2005 ◽  
Vol 44 (7A) ◽  
pp. 4749-4751 ◽  
Author(s):  
Naokatsu Yamamoto ◽  
Toshiaki Matsuno ◽  
Hiroshi Takai ◽  
Naoki Ohtani
Keyword(s):  
Circular Polarization ◽  
Optical Switch ◽  
Polarization Control ◽  
All Optical ◽  
All Optical Switch ◽  
Silicon Based

A silicon-based moving-mirror optical switch

1992 ◽  
Vol 10 (8) ◽  
pp. 1078-1085 ◽  
Author(s):  
M.F. Dautartas ◽  
A.M. Benzoni ◽  
Y.C. Chen ◽  
G.E. Blonder ◽  
B.H. Johnson ◽  
...  
Keyword(s):  
Optical Switch ◽  
Silicon Based

Silicon-based digital optical switch with slot structure

2009 ◽  
Author(s):  
Simiao Xiao ◽  
Xiang Wang ◽  
Fan Wang ◽  
Yinlei Hao ◽  
Xiaoqing Jiang ◽  
...  
Keyword(s):  
Optical Switch ◽  
Silicon Based ◽  
Slot Structure

Ring-resonator-assisted optical switch with high extinction ratio

2008 ◽  
Author(s):  
Fan Wang ◽  
Xiang Wang ◽  
Haifeng Zhou ◽  
Simiao Xiao ◽  
Xiaoqing Jiang ◽  
...  
Keyword(s):  
Ring Resonator ◽  
Optical Switch ◽  
Extinction Ratio ◽  
High Extinction Ratio

Design and fabrication of silicon-based 8×8 MEMS optical switch array

2009 ◽  
Vol 40 (1) ◽  
pp. 83-86 ◽  
Author(s):  
Cuiping Jia ◽  
Jingran Zhou ◽  
Wei Dong ◽  
Weiyou Chen
Keyword(s):  
Optical Switch ◽  
Silicon Based
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