Recent Advances in Low Voltage, High Frequency Polymer Electro-optic Modulators

Author(s):  
W. H. Steier ◽  
M-C. Oh ◽  
H. Zhang ◽  
A. Szep ◽  
L. R. Dalton ◽  
...  
2015 ◽  
Author(s):  
Jianghai Xia ◽  
Lingli Gao ◽  
Yudi Pan ◽  
Chao Shen

2015 ◽  
Vol 113 (7) ◽  
pp. 2840-2844 ◽  
Author(s):  
Pariya Salami ◽  
Maxime Lévesque ◽  
Jean Gotman ◽  
Massimo Avoli

Low-voltage fast (LVF)- and hypersynchronous (HYP)-seizure onset patterns can be recognized in the EEG of epileptic animals and patients with temporal lobe epilepsy. Ripples (80–200 Hz) and fast ripples (250–500 Hz) have been linked to each pattern, with ripples predominating during LVF seizures and fast ripples predominating during HYP seizures in the rat pilocarpine model. This evidence led us to hypothesize that these two seizure-onset patterns reflect the contribution of neural networks with distinct transmitter signaling characteristics. Here, we tested this hypothesis by analyzing the seizure activity induced with the K+ channel blocker 4-aminopyridine (4AP, 4–5 mg/kg ip), which enhances both glutamatergic and GABAergic transmission, or the GABAA receptor antagonist picrotoxin (3–5 mg/kg ip); rats were implanted with electrodes in the hippocampus, the entorhinal cortex, and the subiculum. We found that LVF onset occurred in 82% of 4AP-induced seizures whereas seizures after picrotoxin were always HYP. In addition, high-frequency oscillation analysis revealed that 4AP-induced LVF seizures were associated with higher ripple rates compared with fast ripples ( P < 0.05), whereas picrotoxin-induced seizures contained higher rates of fast ripples compared with ripples ( P < 0.05). These results support the hypothesis that two distinct patterns of seizure onset result from different pathophysiological mechanisms.


2014 ◽  
Vol 331 ◽  
pp. 251-261 ◽  
Author(s):  
Chang-Lun Sun ◽  
Zhu-Bo Li ◽  
Chuan-Tao Zheng ◽  
Qian-Qian Luo ◽  
Xiao-Liang Huang ◽  
...  

2018 ◽  
Vol 5 (2) ◽  
pp. 1800453 ◽  
Author(s):  
Ulrike Kraft ◽  
Tarek Zaki ◽  
Florian Letzkus ◽  
Joachim N. Burghartz ◽  
Edwin Weber ◽  
...  

1999 ◽  
Vol 597 ◽  
Author(s):  
K. Nashimoto ◽  
S. Nakamura ◽  
H. Moriyama ◽  
K. Haga ◽  
M. Watanabe ◽  
...  

AbstractHeterostructures of a Pb(Zr,Ti)O3 (PZT) waveguide/(Pb,La)(Zr,Ti)O3 (PLZT) system buffer layer were grown on a Nb-doped SrTiO3 (Nb:ST) substrate by solid-phase epitaxy. The propagation loss in the PLZT heterostructure waveguides was on the order of I dB/cm. An electro-optic beam deflection device with an ITO prism electrode on the surface of the PLZT heterostructure waveguide presented efficient deflection of the coupled laser beam by applying a voltage between the electrode and the substrate. A beam deflection greater than 10 mrad at 5 V and frequency response as fast as 13 MHz were observed. An apparent electro-optic coefficient as large as 39 pmJV was estimated from the deflection characteristics for the TE mode and TM mode suggesting the polarization independent nature of the PZT waveguide. For integrating the electrooptic PLZT heterostructure waveguides, channel waveguides were fabricated in the PZT waveguides using a simple wet-etching process. Based on a low-voltage drive structure, lowloss waveguide process, and fine patterning process, a fabricated digital matrix switch showed a – 10 dB cross-talk at a voltage as low as 7.5 V.


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