Low-Voltage, High-Frequency Organic Transistors and Unipolar and Complementary Ring Oscillators on Paper

2018 ◽  
Vol 5 (2) ◽  
pp. 1800453 ◽  
Author(s):  
Ulrike Kraft ◽  
Tarek Zaki ◽  
Florian Letzkus ◽  
Joachim N. Burghartz ◽  
Edwin Weber ◽  
...  
Keyword(s):  
High Frequency ◽  
Low Voltage ◽  
Organic Transistors ◽  
Ring Oscillators

scholarly journals Small contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
James W. Borchert ◽  
Boyu Peng ◽  
Florian Letzkus ◽  
Joachim N. Burghartz ◽  
Paddy K. L. Chan ◽  
...  
Keyword(s):  
Contact Resistance ◽  
High Frequency ◽  
Low Voltage ◽  
Organic Transistors ◽  
High Frequency Operation

Solution Shearing of a High‐Capacitance Polymer Dielectric for Low‐Voltage Organic Transistors

2019 ◽  
Vol 5 (6) ◽  
pp. 1900067 ◽  
Author(s):  
Katherina Haase ◽  
Jakob Zessin ◽  
Konstantinos Zoumboulis ◽  
Markus Müller ◽  
Mike Hambsch ◽  
...  
Keyword(s):  
Low Voltage ◽  
Organic Transistors ◽  
High Capacitance ◽  
Polymer Dielectric

scholarly journals Distinct EEG seizure patterns reflect different seizure generation mechanisms

2015 ◽  
Vol 113 (7) ◽  
pp. 2840-2844 ◽  
Author(s):  
Pariya Salami ◽  
Maxime Lévesque ◽  
Jean Gotman ◽  
Massimo Avoli
Keyword(s):  
High Frequency ◽  
Channel Blocker ◽  
Seizure Activity ◽  
Low Voltage ◽  
High Frequency Oscillation ◽  
Seizure Onset ◽  
Frequency Oscillation ◽  
Oscillation Analysis ◽  
Pilocarpine Model ◽  
Generation Mechanisms

Low-voltage fast (LVF)- and hypersynchronous (HYP)-seizure onset patterns can be recognized in the EEG of epileptic animals and patients with temporal lobe epilepsy. Ripples (80–200 Hz) and fast ripples (250–500 Hz) have been linked to each pattern, with ripples predominating during LVF seizures and fast ripples predominating during HYP seizures in the rat pilocarpine model. This evidence led us to hypothesize that these two seizure-onset patterns reflect the contribution of neural networks with distinct transmitter signaling characteristics. Here, we tested this hypothesis by analyzing the seizure activity induced with the K+ channel blocker 4-aminopyridine (4AP, 4–5 mg/kg ip), which enhances both glutamatergic and GABAergic transmission, or the GABAA receptor antagonist picrotoxin (3–5 mg/kg ip); rats were implanted with electrodes in the hippocampus, the entorhinal cortex, and the subiculum. We found that LVF onset occurred in 82% of 4AP-induced seizures whereas seizures after picrotoxin were always HYP. In addition, high-frequency oscillation analysis revealed that 4AP-induced LVF seizures were associated with higher ripple rates compared with fast ripples ( P < 0.05), whereas picrotoxin-induced seizures contained higher rates of fast ripples compared with ripples ( P < 0.05). These results support the hypothesis that two distinct patterns of seizure onset result from different pathophysiological mechanisms.

scholarly journals Flexible low-voltage high-frequency organic thin-film transistors

2020 ◽  
Vol 6 (21) ◽  
pp. eaaz5156 ◽  
Author(s):  
James W. Borchert ◽  
Ute Zschieschang ◽  
Florian Letzkus ◽  
Michele Giorgio ◽  
R. Thomas Weitz ◽  
...  
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Dynamic Performance ◽  
Lithium Ion ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Industry Standard ◽  
Primary Driver

The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 1010, subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques.

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