Strained-layer MQW gain-coupled DFB lasers: an approach for high power and high-temperature operation

1995 ◽  
Author(s):  
H. Lu ◽  
C. Blaauw ◽  
T. Makino ◽  
B. Benyon ◽  
B. Parkinson
Keyword(s):  
High Temperature ◽  
High Power ◽  
Strained Layer ◽  
High Temperature Operation

scholarly journals InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 806 ◽  
Author(s):  
Gamini Ariyawansa ◽  
Joshua Duran ◽  
Charles Reyner ◽  
John Scheihing
Keyword(s):  
High Temperature ◽  
Quantum Efficiency ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Integration Time ◽  
Strained Layer ◽  
Detector Structure ◽  
Strained Layer Superlattice ◽  
High Temperature Operation

This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the nBn architecture, the detector structure was grown by molecular beam epitaxy and consists of a 5.5 µm thick n-type SLS as the infrared-absorbing element. Through detailed characterization, it was found that the detector exhibits a cut-off wavelength of 5.5 um, a peak external quantum efficiency (without anti-reflection coating) of 56%, and a dark current of 3.4 × 10−4 A/cm2, which is a factor of 9 times Rule 07, at 160 K temperature. It was also found that the quantum efficiency increases with temperature and reaches ~56% at 140 K, which is probably due to the diffusion length being shorter than the absorber thickness at temperatures below 140 K. A 320 × 256 focal plane array was also fabricated and tested, revealing noise equivalent temperature difference of ~10 mK at 80 K with f/2.3 optics and 3 ms integration time. The overall performance indicates that these SLS detectors have the potential to reach the performance comparable to InSb detectors at temperatures higher than 80 K, enabling high-temperature operation.

High-temperature operation of high-power InGaAlP visible laser diodes

1993 ◽  
Author(s):  
Gen-ichi Hatakoshi ◽  
Koichi Nittoh ◽  
Yukie Nishikawa ◽  
Kazuhiko Itaya ◽  
Masaki Okajima
Keyword(s):  
High Temperature ◽  
High Power ◽  
Laser Diodes ◽  
Visible Laser ◽  
High Temperature Operation

High-power and high-temperature operation of Mg-doped AlGaInP-based red laser diodes

2004 ◽  
Vol 40 (12) ◽  
pp. 1634-1638 ◽  
Author(s):  
T. Onishi ◽  
K. Inoue ◽  
K. Onozawa ◽  
T. Takayama ◽  
M. Yuri
Keyword(s):  
High Temperature ◽  
High Power ◽  
Laser Diodes ◽  
High Temperature Operation ◽  
Mg Doped

1.5μm VCSEL structure optimization for high-power and high-temperature operation

2004 ◽  
Vol 272 (1-4) ◽  
pp. 520-525 ◽  
Author(s):  
A. Mereuta ◽  
A. Syrbu ◽  
V. Iakovlev ◽  
A. Rudra ◽  
A. Caliman ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Structure Optimization ◽  
High Temperature Operation

High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers

1991 ◽  
Vol 3 (10) ◽  
pp. 857-859 ◽  
Author(s):  
H.K. Choi ◽  
C.A. Wang ◽  
D.F. Kolesar ◽  
R.L. Aggarwal ◽  
J.N. Walpole
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Temperature Operation

High-power, high-temperature InGaAs-AlGaAs strained-layer quantum-well diode lasers

1994 ◽  
Vol 30 (8) ◽  
pp. 646-648 ◽  
Author(s):  
C.A. Wang ◽  
H.K. Choi ◽  
W.W. Chow ◽  
J.N. Walpole ◽  
C.T. Fuller ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Strained Layer
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