High-power, high-temperature InGaAs-AlGaAs strained-layer quantum-well diode lasers

1994 ◽  
Vol 30 (8) ◽  
pp. 646-648 ◽  
Author(s):  
C.A. Wang ◽  
H.K. Choi ◽  
W.W. Chow ◽  
J.N. Walpole ◽  
C.T. Fuller ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Strained Layer

High-power, high-temperature operation of AlInGaAs-AlGaAs strained single-quantum-well diode lasers

1991 ◽  
Vol 3 (10) ◽  
pp. 857-859 ◽  
Author(s):  
H.K. Choi ◽  
C.A. Wang ◽  
D.F. Kolesar ◽  
R.L. Aggarwal ◽  
J.N. Walpole
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Temperature Operation

High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding

1994 ◽  
Vol 7 (3) ◽  
pp. 139-143 ◽  
Author(s):  
Tetsuro Ijichi ◽  
Michio Ohkubo ◽  
Akira Iketani ◽  
Toshio Kikuta
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Strained Layer

MBE growth of high-power quantum-well diode lasers emitting at 3.5 μm

1997 ◽  
Vol 175-176 ◽  
pp. 825-832 ◽  
Author(s):  
G.W. Turner ◽  
M.J. Manfra ◽  
H.K. Choi ◽  
M.K. Connors
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Mbe Growth

Effect of facet reflectivities on high-power highly strained InGaAs quantum-well diode lasers operating at 1.2 μm

2006 ◽  
Author(s):  
C. J. Panchal ◽  
V. A. Kheraj ◽  
K. M. Patel ◽  
P. K. Patel ◽  
B. M. Arora ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
Highly Strained ◽  
Ingaas Quantum Well

High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 μm

1998 ◽  
Author(s):  
Raymond J. Menna ◽  
Dmitri Z. Garbuzov ◽  
Hao Lee ◽  
Ramon U. Martinelli ◽  
S. Yegna Narayan ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers

High‐power conversion efficiency quantum well diode lasers

1987 ◽  
Vol 51 (17) ◽  
pp. 1318-1319 ◽  
Author(s):  
R. G. Waters ◽  
D. K. Wagner ◽  
D. S. Hill ◽  
P. L. Tihanyi ◽  
B. J. Vollmer
Keyword(s):  
Quantum Well ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
High Power ◽  
Diode Lasers ◽  
Power Conversion ◽  
High Power Conversion Efficiency

Super-high-power operation of 0.98-μm InGaAs(P)/InGaP/GaAs-broadened waveguide separate confinement heterostructure quantum well diode lasers

1999 ◽  
Author(s):  
Dmitri Z. Garbuzov ◽  
Mikhail A. Maiorov ◽  
V. Khalfin ◽  
Maria G. Harvey ◽  
A. Al-Muhanna ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
High Power Operation ◽  
Power Operation
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