High-coupling efficiency of a 1.3-μm spot-size converter integrated laser diode with pn-buried heterostructure for high-temperature operation

1997 ◽  
Vol 15 (8) ◽  
pp. 1602-1607 ◽  
Author(s):  
Y. Suzaki ◽  
O. Mitomi ◽  
Y. Kondo ◽  
Y. Sakai ◽  
Y. Kawaguchi ◽  
...  
Keyword(s):  
High Temperature ◽  
Laser Diode ◽  
Coupling Efficiency ◽  
Spot Size ◽  
Buried Heterostructure ◽  
High Temperature Operation

Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation

1999 ◽  
Vol 11 (1) ◽  
pp. 3-5 ◽  
Author(s):  
Wang Zhi Jie ◽  
Chua Soo Jin ◽  
Zhou Fan ◽  
Wang Xiao Jie ◽  
Wang Wei ◽  
...  
Keyword(s):  
High Temperature ◽  
Blocking Layer ◽  
Buried Heterostructure ◽  
High Temperature Operation

High-power and high-temperature operation of eight-element, monolithic, 780nm MQW laser diode array on 50 μm centres

1993 ◽  
Vol 29 (18) ◽  
pp. 1636 ◽  
Author(s):  
A. Shima ◽  
T. Kadowaki ◽  
T. Miura ◽  
M. Miyashita ◽  
S. Kageyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Laser Diode ◽  
High Power ◽  
Diode Array ◽  
Laser Diode Array ◽  
High Temperature Operation

High temperature operation of InGaAsP laser diode with increased electron barrier by paired modulation doping structure

2008 ◽  
Author(s):  
Il-Won Kim ◽  
Seung -Hyeon Seong ◽  
Joon Sang Yu ◽  
Dae Cheol Jeong ◽  
Jung Koo Kang ◽  
...  
Keyword(s):  
High Temperature ◽  
Laser Diode ◽  
Modulation Doping ◽  
High Temperature Operation

High-temperature operation of 1.55 μm InGaAsP double-channel buried-heterostructure lasers grown by LPE

1984 ◽  
Vol 20 (10) ◽  
pp. 417 ◽  
Author(s):  
P. Besomi ◽  
R.B. Wilson ◽  
R.L. Brown ◽  
N.K. Dutta ◽  
P.D. Wright ◽  
...  
Keyword(s):  
High Temperature ◽  
Buried Heterostructure ◽  
High Temperature Operation ◽  
Double Channel
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