scholarly journals Implantation energy- and size-dependent light output of enhanced-efficiency micro-LED arrays fabricated by ion implantation

2021 ◽  
Vol 29 (5) ◽  
pp. 7757
Author(s):  
Feng Xu ◽  
Yi Tan ◽  
Zili Xie ◽  
Baoshun Zhang
Keyword(s):  
Ion Implantation ◽  
Light Output ◽  
Implantation Energy ◽  
Size Dependent ◽  
Led Arrays

Degradation in a Molybdenum-Gate MOS Structure Caused by N+ Ion Implantation for Work Function Control

2002 ◽  
Vol 716 ◽  
Author(s):  
Takaaki Amada ◽  
Nobuhide Maeda ◽  
Kentaro Shibahara
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Nitrogen Concentration ◽  
Implantation Dose ◽  
Control Technique ◽  
High Dose ◽  
Implantation Energy ◽  
20 Nm ◽  
Large Work ◽  
Gate Work Function

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes

2010 ◽  
Vol 107 (1) ◽  
pp. 013103 ◽  
Author(s):  
Zheng Gong ◽  
Shirong Jin ◽  
Yujie Chen ◽  
Jonathan McKendry ◽  
David Massoubre ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Output ◽  
Spectral Shift ◽  
Light Emitting ◽  
Size Dependent ◽  
Self Heating

Efficient GaN-based Micro-LED Arrays

2002 ◽  
Vol 743 ◽  
Author(s):  
H. W. Choi ◽  
C. W. Jeon ◽  
M. D. Dawson ◽  
P. R. Edwards ◽  
R. W. Martin
Keyword(s):  
Light Output ◽  
Forward Direction ◽  
Step Height ◽  
Active Area ◽  
Individual Element ◽  
Two Dimensional ◽  
Broad Area ◽  
Highly Efficient ◽  
The Individual ◽  
Led Arrays

ABSTRACTHighly efficient, two-dimensional arrays of parallel-addressed InGaN blue microLEDs with individual element diameters of 8, 12 and 20μm have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallisation, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have I-V characteristics similar to those of broad-area reference LEDs fabricated from the same wafer, and give superior (3mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.

Optical Activation of Ion Implanted Rare-Earths

1993 ◽  
Vol 301 ◽  
Author(s):  
P.N. Favennec ◽  
H. L'haridon ◽  
D. Moutonnet ◽  
M. Salvi ◽  
M. Gauneau
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Rare Earth Elements ◽  
Rare Earths ◽  
Annealing Temperature ◽  
Implantation Energy ◽  
Optical Activation ◽  
Energy Dose ◽  
The Rare Earth ◽  
Ion Implanted

ABSTRACTA review of the main results concerning the ion implantation of the rare-earth elements is given.To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and annealing (temperature, duration) conditions. The studied materials are Si, II-VI binaries (ZnTe, CdS), III-V binaries (GaAs, InP), III-V ternaries (GaAlAs, GaInAs) and III-V quaternaries (GaInAsP).

Correlation of Size and Photoluminescence for Ge Nanocrystals in SiO2 Matrices

1994 ◽  
Vol 358 ◽  
Author(s):  
C.M Yang ◽  
K.V. Shcheglov ◽  
M.L. Brongersma ◽  
A Polman ◽  
H.A. Atwater
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Room Temperature ◽  
Size Distributions ◽  
Photoluminescence Spectra ◽  
Size Dependent ◽  
Electron Microscopy Data ◽  
Exciton Recombination ◽  
Microscopy Data ◽  
Ge Nanocrystals

ABSTRACTSynthesis and size-dependent photoluminescence has been performed for Ge nanocrystals in SiO2 matrices with average diameters between 2 nm and 9 nm, formed by room temperature ion implantation into SiO2 followed by precipitation during vacuum thermal anneals. Nanocrystal size distributions obtained from electron microscopy data were used in conjunction with a quantum-confined exciton recombination model[l] to generate calculated photoluminescence spectra, which were compared with experimental spectra.

Effects of Low Energy Carbon Ion Implantation on the Material Properties of InAs/GaAs Quantum Dots with Variation in Capping Layer

2015 ◽  
Vol 1743 ◽  
Author(s):  
S. Upadhyay ◽  
A Mandal ◽  
A. Basu ◽  
P. Singh ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Blue Shift ◽  
Low Energy ◽  
Stress Generation ◽  
Carbon Ions ◽  
Implantation Energy ◽  
Carbon Ion ◽  
Capping Layer ◽  
Pl Intensity

ABSTRACTUnder controlled irradiation of low energy carbon ions, photoluminescence (PL) study of InAs quantum dots prepared with different capping structures (GaAs and InAlGaAs) was carried out. Samples were investigated by varying implantation energy from 15 keV to 50 keV with fluence ranging between 3 × 1011ions/cm2 and 8 × 1011 ions/cm2. For fixed fluence of 4 × 1011ions/cm2, low temperature PL showed enhancement in a certain range of energy, along with a blue shift in the PL peak wavelength. In contrast, with varying fluence at fixed implantation energy of 50 keV, PL enhancement was not significant, rather a drop in PL intensity was noted at higher fluence from 5 × 1011 to 8 × 1011 ions/cm2. Moreover, carbon ion implantation caused a blue shift in the PL emission peak for both energy and fluence variations. PL intensity suppression was possibly caused by the formation of non-radiative recombination centers (NRCs) near the capping layer, while the corresponding blue shift might be attributed to stress generation in the capping layer due to implantation. As-grown and implanted InAlGaAs capped samples did not exhibit much variation in full width at half maxima of PL spectra; however, significant variation was observed for the GaAs capped sample. These results validate that InAlGaAs-capped QDs are more immune to ion implantation.

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