Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate
Keyword(s):
2007 ◽
Vol 401-402
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pp. 307-310
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Keyword(s):
Keyword(s):
Keyword(s):
1992 ◽
Vol 63
(6)
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pp. 3425-3430
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1983 ◽
Vol 63
(3)
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pp. 493-526
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2009 ◽
Vol 12
(10)
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pp. H392
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