scholarly journals Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications

2016 ◽  
Vol 24 (23) ◽  
pp. 26363 ◽  
Author(s):  
Stefano Dominici ◽  
Hanqing Wen ◽  
Francesco Bertazzi ◽  
Michele Goano ◽  
Enrico Bellotti
Keyword(s):  
Numerical Study ◽  
Carrier Recombination ◽  
Recombination Processes ◽  
Optoelectronic Applications ◽  
Gesn Alloy

scholarly journals Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Shiqiang Lu ◽  
Jinchai Li ◽  
Kai Huang ◽  
Guozhen Liu ◽  
Yinghui Zhou ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Current Density ◽  
Carrier Transport ◽  
Defect Density ◽  
Numerical Study ◽  
Structure Design ◽  
Operating Conditions ◽  
Hole Injection ◽  
Electron Blocking Layer ◽  
Recombination Processes

AbstractHere we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current density, which poses challenges for improving efficiency and realizing stable full-color emission. Carrier transport and matching are analyzed to determine the best operating conditions and optimize the structure design of micro-LED at low current density. It is shown that less quantum well number in the active region enhances carrier matching and radiative recombination rate, leading to higher quantum efficiency and output power. Effectiveness of the electron blocking layer (EBL) for micro-LED is discussed. By removing the EBL, the electron confinement and hole injection are found to be improved simultaneously, hence the emission of micro-LED is enhanced significantly at low current density. The recombination processes regarding Auger and Shockley–Read–Hall are investigated, and the sensitivity to defect is highlighted for micro-LED at low current density.Synopsis: The polarization-induced QCSE, the carrier transport and matching, and recombination processes of InGaN micro-LEDs operating at low current density are numerically investigated. Based on the understanding of these device behaviors and mechanisms, specifically designed epitaxial structures including two QWs, highly doped or without EBL and p-GaN with high hole concentration for the efficient micro-LED emissive display are proposed. The sensitivity to defect density is also highlighted for micro-LED.

Carrier recombination processes in 1.3 μm and 1.5 μm InGaAs(P)-based lasers at cryogenic temperatures and high pressures

2004 ◽  
Vol 241 (14) ◽  
pp. 3399-3404 ◽  
Author(s):  
S. J. Sweeney ◽  
S. R. Jin ◽  
C. N. Ahmad ◽  
A. R. Adams ◽  
B. N. Murdin
Keyword(s):  
High Pressures ◽  
Cryogenic Temperatures ◽  
Carrier Recombination ◽  
Recombination Processes

Ultraslow carrier recombination processes close to Dirac point in graphene/hBN heterostructures (Conference Presentation)

2020 ◽  
Author(s):  
Juliette Mangeney ◽  
Panhui Huang ◽  
Simon Messelot ◽  
Holger Graef ◽  
Jerome Tignon ◽  
...  
Keyword(s):  
Dirac Point ◽  
Carrier Recombination ◽  
Recombination Processes

Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals

2019 ◽  
Vol 13 (1) ◽  
pp. 012004 ◽  
Author(s):  
Kazunobu Kojima ◽  
Fumimasa Horikiri ◽  
Yoshinobu Narita ◽  
Takehiro Yoshida ◽  
Hajime Fujikura ◽  
...  
Keyword(s):  
Nonradiative Recombination ◽  
Carrier Recombination ◽  
Carbon Impurities ◽  
Recombination Processes ◽  
Recombination Centers

Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers

2003 ◽  
Vol 47 (3) ◽  
pp. 501-506 ◽  
Author(s):  
R. Fehse ◽  
A.R. Adams ◽  
S.J. Sweeney ◽  
S. Tomic ◽  
H. Riechert ◽  
...  
Keyword(s):  
Carrier Recombination ◽  
Recombination Processes ◽  
Emitting Lasers

scholarly journals Carrier recombination in sonochemically synthesized ZnO powders

2017 ◽  
Vol 35 (1) ◽  
pp. 211-216 ◽  
Author(s):  
M.I. Zakirov ◽  
O.A. Korotchenkov
Keyword(s):  
Surface Defects ◽  
Sonochemical Method ◽  
Photoluminescence Spectra ◽  
Carrier Recombination ◽  
Convenient Means ◽  
Recombination Processes ◽  
Stirring Time ◽  
Zno Powders ◽  
Ft Ir ◽  
Volume Defect

AbstractZnO powders with particle size in the nm to μm range have been fabricated by sonochemical method, utilizing zinc acetate and sodium hydroxide as starting materials. Carrier recombination processes in the powders have been investigated using the photoluminescence, FT-IR and surface photovoltage techniques. It has been shown that the photoluminescence spectra exhibit a number of defect-related emission bands which are typically observed in ZnO lattice and which depend on the sonication time. It has been found that the increase of the stirring time results in a faster decay of the photovoltage transients for times shorter than approximately 5 ms. From the obtained data it has been concluded that the sonication modifies the complicated trapping dynamics from volume to surface defects, whereas the fabrication method itself offers a remarkably convenient means of modifying the relative content of the surface-to-volume defect ratio in powder grains and altering the dynamics of photoexcited carriers.

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