Carrier recombination processes in 1.3 μm and 1.5 μm InGaAs(P)-based lasers at cryogenic temperatures and high pressures

2004 ◽  
Vol 241 (14) ◽  
pp. 3399-3404 ◽  
Author(s):  
S. J. Sweeney ◽  
S. R. Jin ◽  
C. N. Ahmad ◽  
A. R. Adams ◽  
B. N. Murdin
Keyword(s):  
High Pressures ◽  
Cryogenic Temperatures ◽  
Carrier Recombination ◽  
Recombination Processes

scholarly journals Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications

2016 ◽  
Vol 24 (23) ◽  
pp. 26363 ◽  
Author(s):  
Stefano Dominici ◽  
Hanqing Wen ◽  
Francesco Bertazzi ◽  
Michele Goano ◽  
Enrico Bellotti
Keyword(s):  
Numerical Study ◽  
Carrier Recombination ◽  
Recombination Processes ◽  
Optoelectronic Applications ◽  
Gesn Alloy

Ultraslow carrier recombination processes close to Dirac point in graphene/hBN heterostructures (Conference Presentation)

2020 ◽  
Author(s):  
Juliette Mangeney ◽  
Panhui Huang ◽  
Simon Messelot ◽  
Holger Graef ◽  
Jerome Tignon ◽  
...  
Keyword(s):  
Dirac Point ◽  
Carrier Recombination ◽  
Recombination Processes

Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals

2019 ◽  
Vol 13 (1) ◽  
pp. 012004 ◽  
Author(s):  
Kazunobu Kojima ◽  
Fumimasa Horikiri ◽  
Yoshinobu Narita ◽  
Takehiro Yoshida ◽  
Hajime Fujikura ◽  
...  
Keyword(s):  
Nonradiative Recombination ◽  
Carrier Recombination ◽  
Carbon Impurities ◽  
Recombination Processes ◽  
Recombination Centers

Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers

2003 ◽  
Vol 47 (3) ◽  
pp. 501-506 ◽  
Author(s):  
R. Fehse ◽  
A.R. Adams ◽  
S.J. Sweeney ◽  
S. Tomic ◽  
H. Riechert ◽  
...  
Keyword(s):  
Carrier Recombination ◽  
Recombination Processes ◽  
Emitting Lasers

scholarly journals Carrier recombination in sonochemically synthesized ZnO powders

2017 ◽  
Vol 35 (1) ◽  
pp. 211-216 ◽  
Author(s):  
M.I. Zakirov ◽  
O.A. Korotchenkov
Keyword(s):  
Surface Defects ◽  
Sonochemical Method ◽  
Photoluminescence Spectra ◽  
Carrier Recombination ◽  
Convenient Means ◽  
Recombination Processes ◽  
Stirring Time ◽  
Zno Powders ◽  
Ft Ir ◽  
Volume Defect

AbstractZnO powders with particle size in the nm to μm range have been fabricated by sonochemical method, utilizing zinc acetate and sodium hydroxide as starting materials. Carrier recombination processes in the powders have been investigated using the photoluminescence, FT-IR and surface photovoltage techniques. It has been shown that the photoluminescence spectra exhibit a number of defect-related emission bands which are typically observed in ZnO lattice and which depend on the sonication time. It has been found that the increase of the stirring time results in a faster decay of the photovoltage transients for times shorter than approximately 5 ms. From the obtained data it has been concluded that the sonication modifies the complicated trapping dynamics from volume to surface defects, whereas the fabrication method itself offers a remarkably convenient means of modifying the relative content of the surface-to-volume defect ratio in powder grains and altering the dynamics of photoexcited carriers.

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