scholarly journals Bi-SERS sensing and enhancement by Au-Ag bimetallic non-alloyed nanoparticles on amorphous and crystalline silicon substrate

2015 ◽  
Vol 23 (5) ◽  
pp. 6254 ◽  
Author(s):  
Chee Leong Tan ◽  
Soo Kyung Lee ◽  
Yong Tak Lee
Keyword(s):  
Silicon Substrate ◽  
Crystalline Silicon ◽  
Sers Sensing

Micro- and Nanotextured Silicon for Antireflective Coatings of Solar Cells

2016 ◽  
Vol 39 ◽  
pp. 89-95 ◽  
Author(s):  
Anatoly Druzhinin ◽  
Valery Yerokhov ◽  
Stepan Nichkalo ◽  
Yevhen Berezhanskyi
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Silicon Substrate ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Silicon Surfaces ◽  
Antireflective Coatings ◽  
High Conversion Efficiency ◽  
Industrial Use

The paper deals with obtaining of textured silicon surfaces by chemical etching. As a result of experiments based on the modification and optimization of obtaining a textured silicon, several methods of chemical texturing of the crystalline silicon surface were developed. It was shown that modified isotropic and anisotropic etching methods are applicable to create a microrelief on the surface of silicon substrate. These methods in addition to their high conversion efficiency can be used for both mono- and multicrystalline silicon which would ensure their industrial use.

A Study on the Tip-Based Nanomachining of Silicon Wafer Using Atomic Force Microscopy (AFM)

2020 ◽  
Author(s):  
Chionye Okwuashi ◽  
J. Ma ◽  
M. P. Jahan
Keyword(s):  
Silicon Wafer ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Md Simulation ◽  
Crystalline Silicon ◽  
Lattice Structure ◽  
Computational Study ◽  
Md Simulations ◽  
Simulation Software ◽  
Fixed Layer

Abstract In this work, the principles of nanoindentation and nanoscratching processes (tip-based nanomachining processes) are applied in the computational study of relevant material behaviors of single crystalline silicon wafer. Molecular dynamics (MD) simulations are carried out to model the tip-based nanomachining process of a silicon substrate by employing LAMMPS, a free MD simulation software. A spherical diamond tool tip with a radius of 8Å is considered. In the MD simulation, a single diamond indenter is treated as a rigid body. The dimensions of the silicon workpiece in the MD simulations are 500Å × 500Å × 350Å, containing 2,207,698 Si atoms. A diamond cubic lattice structure is employed to arrange these Si atoms from the very beginning at 293 K (room temperature) and a lattice constant of 5.43Å is employed. The lowest layer of the Si workpiece model is fixed and this fixed layer is one atom thick i.e. its thickness is 5.43Å. Immediately above the fixed layer is another layer of equal thickness (5.43Å), which is called thermostat layer. This layer serves the purpose of maintaining constant temperature of the system. The force-controlled approach is employed for this study. Essentially, this research evaluates the influence of three parameters: exerted force on indenter, workpiece temperature (room temperature and several higher workpiece temperatures), and indenter size on the depth of indentation, length of scratch, and coordination number of the atoms. Verlet -Velocity algorithm is used to compute the velocities and positions of the atoms. Since we desired to maintain consistency in volume, energy, and the number of particles, the constant-energy ensemble (NVE), also known as microcanonical ensemble is applied in the simulations. Both the Si-Si and C-C interactions are computed using the Tersoff potential throughout the simulations while the Si-C interactions are computed with the Morse potential. The MDS results are visualized and analyzed using OVITO, a free and commonly use visualizing tool. It is found that these parameters (exerted force on indenter, operating temperature of the silicon substrate, and size of the indenter) have substantial influence on the behavior of the silicon substrate.

Impurity Solubility and Redistribution Due to Recrystallization of Preamorphized Silicon

2006 ◽  
Vol 912 ◽  
Author(s):  
Ray Duffy ◽  
Vincent Venezia ◽  
Marco Hopstaken ◽  
Geert Maas ◽  
Thuy Dao ◽  
...  
Keyword(s):  
Distribution Coefficient ◽  
Silicon Substrate ◽  
Laser Annealing ◽  
Equilibrium Distribution ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Amorphous Region ◽  
Equilibrium Distribution Coefficient ◽  
Impurity Atoms ◽  
Preferential Diffusion

AbstractThe use of silicon substrate preamorphization in ultrashallow junction formation has increased in recent years. The reduction of channeling during impurity implantation, coupled with higher-than-equilibrium metastable solubility levels, produces scaled junctions with low resistances. However, a number of physical phenomena arise that must be considered for proper impurity profile and device optimization.With respect to impurity solubility advanced annealing techniques such as solid-phase-epitaxial-regrowth (SPER), flash, and laser annealing, can place impurity atoms on substitutional sites in the silicon lattice to extremely high concentrations when combined with preamorphization. In this context there is a relationship between the equilibrium distribution coefficient and metastable solubility. The long-established equilibrium distribution coefficient of an impurity, extracted in the liquid to solid phase transformation, can make a prediction of metastable solubility after transformation of amorphous silicon into crystalline silicon during SPER, flash, and laser annealing.With respect to impurity redistribution the significant effects can be split into 3 categories, namely before, during, and after recrystallization. Before recrystallization impurity diffusion in the amorphous region may occur. Boron is particularly susceptible to this effect, which is very significant for the formation of p-type junctions. During recrystallization many impurities move ahead of the amorphous-crystalline (a/c) interface and relocate closer to the surface. In general redistribution is more likely at high impurity concentrations. For low-temperature SPER there is a direct correlation between the magnitude of this redistribution effect and the impurity metastable solubility. After recrystallization, with SPER, flash, and laser annealing commonly leaving residual damage in the silicon substrate, interstitial-diffusers are especially vulnerable to preferential diffusion toward the surface, where impurity atoms may be trapped, ultimately leading to a more shallow profile.

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