scholarly journals Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes

2014 ◽  
Vol 22 (S3) ◽  
pp. A663 ◽  
Author(s):  
Chun-Ta Yu ◽  
Wei-Chih Lai ◽  
Cheng-Hsiung Yen ◽  
Shoou-Jinn Chang
Keyword(s):  
Layer Thickness ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Ingan Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Overall Efficiency

Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes

2012 ◽  
Vol 101 (8) ◽  
pp. 081120 ◽  
Author(s):  
Ray-Ming Lin ◽  
Sheng-Fu Yu ◽  
Shoou-Jinn Chang ◽  
Tsung-Hsun Chiang ◽  
Sheng-Po Chang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Blocking Layer ◽  
Ingan Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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