scholarly journals Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers

2013 ◽  
Vol 21 (7) ◽  
pp. 8276 ◽  
Author(s):  
M. Lysevych ◽  
H. H. Tan ◽  
F. Karouta ◽  
L. Fu ◽  
C. Jagadish
Keyword(s):  
Semiconductor Lasers ◽  
High Power ◽  
Single Mode ◽  
Photon Absorption ◽  
Gain Saturation ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Beam Laser ◽  
Laser Design

Two photon absorption in high power broad area laser diodes

2014 ◽  
Author(s):  
Mehmet Dogan ◽  
Christopher P. Michael ◽  
Yan Zheng ◽  
Lin Zhu ◽  
Jonah H. Jacob
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Photon Absorption ◽  
Broad Area ◽  
Two Photon Absorption ◽  
Two Photon

Two-Photon Absorption Light-Induced Self-Written Waveguide for Single-Mode Optical Interconnection

2018 ◽  
Vol 36 (12) ◽  
pp. 2478-2483 ◽  
Author(s):  
Freddy Tan ◽  
Hidetaka Terasawa ◽  
Okihiro Sugihara ◽  
Akari Kawasaki ◽  
Tatsuya Yamashita ◽  
...  
Keyword(s):  
Single Mode ◽  
Photon Absorption ◽  
Optical Interconnection ◽  
Two Photon Absorption ◽  
Two Photon

Two-Photon Absorption Laser Assisted Device Alteration Using 1340nm CW Laser: Critical Timing Fault Isolation & Localization for 32nm MPU and Beyond

2010 ◽  
Author(s):  
Baohua Niu ◽  
Pat Pardy ◽  
Joe Davis ◽  
Mel Ortega ◽  
Travis Eiles
Keyword(s):  
High Power ◽  
Continuous Wave ◽  
Numerical Aperture ◽  
Fault Isolation ◽  
Photon Absorption ◽  
Solid Immersion Lens ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Critical Timing ◽  
Power Densities

Abstract In this paper, we report on the first observation and study of two-photon absorption (TPA) based laser assisted device alteration (LADA) using a continuous-wave (CW) 1340nm laser. The study was conducted using LADA systems equipped with high numerical aperture (NA) liquid and solid immersion lens objectives on Intel’s 45 nm and 32 nm multiprocessor units (MPU) and test chips. The power densities achievable using these lenses are similar to those reported in the literature for TPA in silicon of CW 1455nm light [1]. We show that the induced photocurrent has a quadratic dependence on the input laser power, a key indicator of two-photon phenomenon. Our results imply that even when using 1340nm wavelength CW lasers, there is a potential for laser invasiveness with the high power densities achievable using high NA objectives. Laser induced damage of the DUT is also a possibility at these high power densities, particularly with the solid immersion lens (SIL). However, we show that the DUT damage threshold can be increased by reducing the DUT’s temperature. Finally, we present results demonstrating a >40% improvement in localization of critical timing faults using TPA based LADA, when compared to traditional 1064nm wavelength (single-photon absorption) LADA.

Improvement of near-field beam quality for high-power laser pulses by a two-photon-absorption organic compound

Optik ◽  
2013 ◽  
Vol 124 (1) ◽  
pp. 60-63 ◽  
Author(s):  
Na Xie ◽  
Yi Guo ◽  
Wanqing Huang ◽  
Xiaodong Wang ◽  
Runchang Zhao ◽  
...  
Keyword(s):  
Organic Compound ◽  
High Power ◽  
Beam Quality ◽  
Near Field ◽  
Laser Pulses ◽  
Photon Absorption ◽  
High Power Laser ◽  
Power Laser ◽  
Two Photon Absorption ◽  
Two Photon

THEORY OF TWO-PHOTON ABSORPTION

1967 ◽  
Vol 45 (8) ◽  
pp. 2513-2524 ◽  
Author(s):  
R. Guccione-Gush ◽  
H. P. Gush ◽  
J. Van Kranendonk
Keyword(s):  
Transition Probability ◽  
Single Mode ◽  
Multipole Expansion ◽  
Photon Absorption ◽  
Matrix Formalism ◽  
Stationary Field ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Density Matrix Formalism ◽  
Simple Evaluation

The two-photon absorption process is discussed using a density matrix formalism. The electromagnetic field is described by means of coherent states, a technique that permits a simple evaluation of the effect of coherence on the transition probability. It is concluded that the latter is the same for a coherent and an incoherent pulse of radiation. In the case of a stationary field containing many modes, the transition probability is nearly the same in the coherent and incoherent cases, whereas for a single mode the transition probability is twice as high for the incoherent field. These conclusions are independent of the multipole expansion of the interaction Hamiltonian and are valid for electric dipole and higher multipole transitions.

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