scholarly journals Low-loss amorphous silicon wire waveguide for integrated photonics: effect of fabrication process and the thermal stability

2010 ◽  
Vol 18 (24) ◽  
pp. 25283 ◽  
Author(s):  
Shiyang Zhu ◽  
G. Q. Lo ◽  
D. L. Kwong
Keyword(s):  
Thermal Stability ◽  
Amorphous Silicon ◽  
Fabrication Process ◽  
Integrated Photonics ◽  
Low Loss

Low-loss Non-volatile Phase-change Integrated Photonics at 1550nm and 750nm

2021 ◽  
Author(s):  
Zhuoran Fang ◽  
Jiajiu Zheng ◽  
Abhi Saxena ◽  
James Whitehead ◽  
Yueyang Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Integrated Photonics ◽  
Low Loss ◽  
Volatile Phase

scholarly journals Optimized low-loss integrated photonics silicon-nitride Y-branch splitter

2020 ◽  
Author(s):  
I. A. Krutov ◽  
M. Yu. Saygin ◽  
I. V. Dyakonov ◽  
S. P. Kulik
Keyword(s):  
Silicon Nitride ◽  
Integrated Photonics ◽  
Low Loss

scholarly journals Low-loss integrated photonics for the blue and ultraviolet regime

APL Photonics ◽  
2019 ◽  
Vol 4 (2) ◽  
pp. 026101 ◽  
Author(s):  
Gavin N. West ◽  
William Loh ◽  
Dave Kharas ◽  
Cheryl Sorace-Agaskar ◽  
Karan K. Mehta ◽  
...  
Keyword(s):  
Integrated Photonics ◽  
Low Loss

Amorphous Silicon-Germanium-Boron Alloy Applied to Low-Loss and High-Speed Diodes

1982 ◽  
Vol 21 (Part 1, No. 11) ◽  
pp. 1559-1565 ◽  
Author(s):  
Katsumi Murase ◽  
Yoshihito Amemiya ◽  
Yoshihiko Mizushima
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
High Speed ◽  
Low Loss ◽  
Amorphous Silicon Germanium

Self-aligned Amorphous Silicon Thin Film Transistors with Mobility above 1 cm2V−1s−1fabricated at 300°C on Clear Plastic Substrates

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kunigunde H Cherenack ◽  
Alex Z Kattamis ◽  
Bahman Hekmatshoar ◽  
James C Sturm ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Fabrication Process ◽  
Plastic Substrate ◽  
Silicon Thin Film ◽  
Free Standing ◽  
Plastic Substrates ◽  
Effective Mobility ◽  
Clear Plastic

ABSTRACTWe have developed a fabrication process for amorphous-silicon thin-film transistors (a-Si:H TFTs) on free-standing clear plastic substrates at temperatures up to 300°C. The 300°C fabrication process is made possible by using a unique clear plastic substrate that has a very low coefficient of thermal expansion (CTE < 10ppm/°C) and a glass transition temperature higher than 300°C. Our TFTs have a conventional inverted-staggered gate back-channel passivated geometry, which we designed to achieve two goals: accurate overlay alignment and a high effective mobility. A requirement that becomes particularly difficult to meet in the making of TFT backplanes on plastic foil at 300°C is minimizing overlay misalignment. Even though we use a substrate that has a relatively low CTE, accurately aligning the TFTs on the free-standing, 70-micrometer thick substrate is challenging. To deal with this immediate challenge, and to continue developing processes for free-standing web substrates, we are introducing techniques for self-alignment to our TFT fabrication process. We have self-aligned the channel to the gate by exposing through the clear plastic substrate. To raise the effective mobility of our TFTs we reduced the series resistance by decreasing the thickness of the amorphous silicon layer between the source-drain contacts and the accumulation layer in the channel. The back-channel passivated structure allows us to decrease the thickness of the a-Si:H active layer down to around 20nm. These changes have enabled us to raise the effective field effect mobility on clear plastic to values above 1 cm2V−1s−1

Amorphous Silicon Based Waveguides And Light Modulators For Silicon Low-Cost Photonic Integrated Circuits

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Cocorullo ◽  
F. G. Della Corte ◽  
R. De Rosa ◽  
I. Rendina ◽  
A. Rubino ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Amorphous Silicon ◽  
Low Cost ◽  
Switching Frequency ◽  
Fabrication Technology ◽  
Low Loss ◽  
Light Modulators ◽  
Microelectronic Technology ◽  
Infrared Wavelengths ◽  
Silicon Based

AbstractThis paper reports about the fabrication and experimental test of an interferometric light intensity modulator integrated in a low loss (0.7 dB/cm), amorphous silicon based waveguide. It measures approximately 1 mm in length, while its cross section is 30-μm-wide and 3-μm-high. The device, which exploits the strong thermo-optic effect in thin film a-Si for its operation, is designed for application at the infrared wavelengths of 1.3 and 1.55 μm. The measured maximum operating on-off switching frequency of the device is 600 kHz. The very simple fabrication technology involves maximum process temperatures of 230 °C, and is therefore compatible with the standard microelectronic technology. This offers a new opportunity for the integration of optical and electronic functions on the same substrate.

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