scholarly journals Encapsulation of low-refractive-index SiO_2 nanorods by Al_2O_3 with atomic layer deposition

2007 ◽  
Vol 15 (24) ◽  
pp. 16285 ◽  
Author(s):  
Sangho S. Kim ◽  
Nicholas T. Gabriel ◽  
Woo-Bin Song ◽  
Joseph J. Talghader
Keyword(s):  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Low Refractive Index

Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

2015 ◽  
Vol 33 (1) ◽  
pp. 01A111 ◽  
Author(s):  
Hao Van Bui ◽  
Frank B. Wiggers ◽  
Anubha Gupta ◽  
Minh D. Nguyen ◽  
Antonius A. I. Aarnink ◽  
...  
Keyword(s):  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Growth ◽  
Layer Deposition

Refractive index and bandgap variation in Al2O3-ZnO ultrathin multilayers prepared by atomic layer deposition

2017 ◽  
Vol 691 ◽  
pp. 308-315 ◽  
Author(s):  
J. López ◽  
E. Solorio ◽  
H.A. Borbón-Nuñez ◽  
F.F. Castillón ◽  
R. Machorro ◽  
...  
Keyword(s):  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

2013 ◽  
Vol 4 ◽  
pp. 732-742 ◽  
Author(s):  
Jörg Haeberle ◽  
Karsten Henkel ◽  
Hassan Gargouri ◽  
Franziska Naumann ◽  
Bernd Gruska ◽  
...  
Keyword(s):  
Growth Rate ◽  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Atomic Layer ◽  
Silicon Substrates ◽  
Initial State ◽  
Elemental Ratios ◽  
Layer Deposition

We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3 layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlate them to X-ray photoelectron spectroscopy (XPS) results. The 200 °C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.

The Characterization of Al2O3 Films Grown by Atomic Layer Deposition Using Al(CH3)3 and H2O

1997 ◽  
Vol 471 ◽  
Author(s):  
Sun Jin Yun ◽  
Kyung-Ho Lee ◽  
Jarmo Skarp ◽  
Hae-Rim Kim ◽  
Kee-Soo Nam
Keyword(s):  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Growth Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Atomic Layer ◽  
Refractive Indices ◽  
Impurity Incorporation ◽  
Layer Deposition ◽  
Secondary Ion

ABSTRACTThe materials characteristics of Al2O3 films grown on Si (100) substrate by traveling wave reactor atomic layer deposition were investigated at the growth temperature ranging from 250 to 500°C. The Al2O3 films grown using Al(CH3)3(TMA) and H2O as precursors were characterized and also compared with the films grown using AlCl3 and H2O. In the study of impurity incorporation, the films grown using TMA showed the C and H count rates of secondary ion mass spectrometry (SIMS) approximately 7–10 times higher than those of the film grown using AlCl3. For the Al2O3 films grown using TMA, the impurity contents and the growth rate decreased and the refractive index increased as increasing the growth temperature. The effect of purge time increase on the impurity incorporation was very small compared with that of growth temperature. The refractive indices were 1.64 and 1.68 at the growth temperatures of 250 and 400°C, respectively. The rough estimation using SIMS data and refractive indices indicated that the H-content decreased from 8.6 at% to 2.9 at% as increasing the substrate temperature from 250 to 400°C. The Al2O3 film grown using AlCl3 and H2O at 500°C contained approximately 0.5% Cl and revealed the refractive index of 1.65.

scholarly journals Zinc Oxide Films with High Transparency and Crystallinity Prepared by a Low Temperature Spatial Atomic Layer Deposition Process

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 459 ◽  
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Tao Sun ◽  
Chia-Hsun Hsu ◽  
Pao-Hsun Huang ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Substrate Temperature ◽  
Atomic Layer ◽  
Infrared Light ◽  
Zno Thin Films ◽  
Process Window ◽  
Layer Deposition

Zinc oxide (ZnO) attracts much attention owing to its remarkable electrical and optical properties for applications in optoelectronics. In this study, ZnO thin films were prepared by spatial atomic layer deposition with diethylzinc and water as precursors. The substrate temperature was varied from 55 to 135 °C to investigate the effects on the optical, electrical, and structural properties of the films. All ZnO samples exhibit an average transmittance in visible and near-infrared light range exceeding 80% and a resistivity in the range of (3.2–9.0) × 10−3 Ω·cm when deposited on a borosilicate glass with a refractive index of ≈1.52. The transmittance, band gap, refractive index, and extinction coefficient are rarely affected, while the resistivity only slightly decreases with increasing temperature. This technique provides a wide process window for depositing ZnO thin films. The results revealed that the films deposited at a substrate of 55 °C were highly crystalline with a preferential (1 0 0) orientation. In addition, the grains grow larger as the substrate temperature increases. The electrical properties and reliability of ZnO/PET samples are also studied in this paper.

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