The Characterization of Al2O3 Films Grown by Atomic Layer Deposition Using Al(CH3)3 and H2O

1997 ◽  
Vol 471 ◽  
Author(s):  
Sun Jin Yun ◽  
Kyung-Ho Lee ◽  
Jarmo Skarp ◽  
Hae-Rim Kim ◽  
Kee-Soo Nam
Keyword(s):  
Refractive Index ◽  
Atomic Layer Deposition ◽  
Growth Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Atomic Layer ◽  
Refractive Indices ◽  
Impurity Incorporation ◽  
Layer Deposition ◽  
Secondary Ion

ABSTRACTThe materials characteristics of Al2O3 films grown on Si (100) substrate by traveling wave reactor atomic layer deposition were investigated at the growth temperature ranging from 250 to 500°C. The Al2O3 films grown using Al(CH3)3(TMA) and H2O as precursors were characterized and also compared with the films grown using AlCl3 and H2O. In the study of impurity incorporation, the films grown using TMA showed the C and H count rates of secondary ion mass spectrometry (SIMS) approximately 7–10 times higher than those of the film grown using AlCl3. For the Al2O3 films grown using TMA, the impurity contents and the growth rate decreased and the refractive index increased as increasing the growth temperature. The effect of purge time increase on the impurity incorporation was very small compared with that of growth temperature. The refractive indices were 1.64 and 1.68 at the growth temperatures of 250 and 400°C, respectively. The rough estimation using SIMS data and refractive indices indicated that the H-content decreased from 8.6 at% to 2.9 at% as increasing the substrate temperature from 250 to 400°C. The Al2O3 film grown using AlCl3 and H2O at 500°C contained approximately 0.5% Cl and revealed the refractive index of 1.65.

Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT

2018 ◽  
Vol 25 (2) ◽  
pp. 511-516
Author(s):  
Dimitry Kouzminov ◽  
James Cournoyer ◽  
Somchintana Norasetthekul ◽  
Harish Muthuraman ◽  
Qi Gao
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Deposition Process ◽  
Atom Probe ◽  
Adverse Impacts ◽  
Layer Deposition ◽  
Quantitative Results ◽  
Secondary Ion

AbstractApplication of atom probe tomography (APT) and 1.5D secondary ion mass spectrometry (SIMS) as complimentary techniques to study fin sidewall doping by plasma implantation (PLAD) is the focus of this paper. Unlike planar transistors, characterization of 3D devices both by SIMS and APT requires sample preparation via trench backfill with α-Si, or other material, via chemical vapor deposition or atomic layer deposition process due to high aspect ratio of test structures. Certain artifacts with adverse impacts on quantitative results encountered in this study are discussed.

scholarly journals Aluminum Nitride Nanofilms by Atomic Layer Deposition Using Alternative Precursors Hydrazinium Chloride and Triisobutylaluminum

Coatings ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 954
Author(s):  
Rashid Dallaev ◽  
Dinara Sobola ◽  
Pavel Tofel ◽  
Ľubomir Škvarenina ◽  
Petr Sedlák
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Atomic Layer ◽  
Nitrogen Atmosphere ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Secondary Ion

The aim of this study is motivated by the pursuit to investigate the performance of new and as yet untested precursors such as hydrazinium chloride (N2H5Cl) and triisobutylaluminum Al(C4H9)3 in the AlN atomic layer deposition (ALD) process as well as to study effects of successive annealing on the quality of the resulting layer. Both precursors are significantly cheaper than their conventional counterparts while also being widely available and can boast easy handling. Furthermore, Al(C4H9)3 being a rather large molecule might promote steric hindrance and prevent formation of undesired hydrogen bonds. Chemical analysis is provided by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS) techniques; surface morphology was studied using atomic force microscopy (AFM). Chlorine containing precursors such as AlCl3 are usually avoided in ALD process due to the risk of chamber contamination. However, experimental data of this study demonstrated that the use of N2H5Cl does not result in chlorine contamination due to the fact that temperature needed for HCl molecules to become reactive cannot be reached within the AlN ALD window (200–350 °C). No amount of chlorine was detected even by the most sensitive techniques such as SIMS, meaning it is fully removed out of the chamber during purge stages. A part of the obtained samples was subjected to annealing (1350 °C) to study effects of high-temperature processing in nitrogen atmosphere, the comparisons with unprocessed samples are provided.

scholarly journals Atomic Layer Deposition of Li–Me–O Thin Films as Electrode Materials for Nanodevices Power Sources

Proceedings ◽  
2018 ◽  
Vol 3 (1) ◽  
pp. 9
Author(s):  
Maxim Yu. Maximov ◽  
Denis Nazarov ◽  
Yury Koshtyal ◽  
ILya Mitrofanov ◽  
Anatoly Popovich
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Electrode Materials ◽  
Secondary Ion Mass Spectrometry ◽  
Lithium Ion ◽  
Atomic Layer ◽  
Battery Life ◽  
Power Sources ◽  
Layer Deposition ◽  
Secondary Ion

The development of nanoscale power sources with a long battery life is now required for novel nanoelectronic devices, such as wireless sensors, biomedical implants, and smart cards. Lithiated metal oxides (Li–Me–O) are widely used in lithium-ion batteries (LIBs). Depending on the type of metal, Li–Me–O can be applied as cathode, anode, or electrolyte materials. Atomic layer deposition (ALD), due to its precision control over thickness, purity, and uniformity over large areas of applied coatings, can be applied for the synthesis of a different thin film LIBs materials. In the present work, the deposition of Li–Sn–O (anode) and Li–Al–O (electrolyte) by ALD is considered. The prepared films were investigated with the use of X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry.

scholarly journals Magneto-optical characterization of ZnO / Ni nano-laminate obtained via Atomic Layer Deposition

2021 ◽  
Vol 1762 (1) ◽  
pp. 012041
Author(s):  
K Buchkov ◽  
A Galluzzi ◽  
B Blagoev ◽  
A Paskaleva ◽  
P Terziyska ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Layer Deposition

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition
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