Influence of Donor Impurity Concentration in a Semiconducting Mask Layer for Super-Resolution Near-Field Pre-recorded Disk

2007 ◽  
Author(s):  
C. Féry ◽  
L. Pacearescu ◽  
G. Pilard ◽  
S. Knappmann
Keyword(s):  
Impurity Concentration ◽  
Near Field ◽  
Super Resolution ◽  
Donor Impurity ◽  
Mask Layer

Super-Resolution Readout for Magneto-Optical Disk by Optimizing the Deposition Condition of Non-Magnetic Mask Layer

2001 ◽  
Vol 674 ◽  
Author(s):  
Takayuki Shima ◽  
Johoo Kim ◽  
Hiroshi Fuji ◽  
Nobufumi Atoda ◽  
Junji Tominaga
Keyword(s):  
Silver Oxide ◽  
Near Field ◽  
Numerical Aperture ◽  
Super Resolution ◽  
Laser Wavelength ◽  
Deposition Condition ◽  
Resolution Limit ◽  
Plasma Sputtering ◽  
Mask Layer ◽  
Disk Structure

ABSTRACTSuper-resolution near-field structure (Super-RENS) was prepared by a heliconwave-plasma sputtering method to improve the disk property that is combined with a magneto-optical (MO) recording disk. Antimony and silver-oxide mask layers were prepared by the method and refractive indices were measured. Recording and retrieving of signals beyond the resolution limit (<370 nm) were achieved for both mask cases. Attempts to optimize the disk structure were also made using a conventional sputtering method. The smallest mark size was around 200 nm and the highest carrier-to-noise ratio (CNR) was 30 dB for 300-nm mark and 22 dB for 250-nm, when using a laser wavelength of 780 nm and a numerical aperture of 0.53. We have found that there is a competing super-resolutional mechanism besides Super-RENS that appears when high readout laser power is applied. This mechanism played rather an important role at least in the mark-size range of 200-370 nm.

Recording and readout mechanisms of super-resolution near-field structure disk with a silver oxide mask layer

2003 ◽  
Vol 83 (11) ◽  
pp. 2136-2138 ◽  
Author(s):  
Yung-Chiun Her ◽  
Yuh-Chang Lan ◽  
Wei-Chih Hsu ◽  
Song-Yeu Tsai
Keyword(s):  
Silver Oxide ◽  
Near Field ◽  
Super Resolution ◽  
Field Structure ◽  
Mask Layer

Blu-ray Type Super Resolution Near Field Optical Disk with Sb70Te30 or Sb2Te3 Mask Layer

2006 ◽  
Author(s):  
L.P. Shi ◽  
T.C. Chong ◽  
X. Hu ◽  
J.M. Li ◽  
K.C. Zhao ◽  
...  
Keyword(s):  
Near Field ◽  
Super Resolution ◽  
Optical Disk ◽  
Mask Layer

Static Optical Recording Properties of Super-Resolution Near-Field Structure with Bismuth Mask Layer

2004 ◽  
Vol 43 (11A) ◽  
pp. 7802-7806 ◽  
Author(s):  
Feng Zhang ◽  
Wendong Xu ◽  
Yang Wang ◽  
Fuxi Gan
Keyword(s):  
Near Field ◽  
Super Resolution ◽  
Field Structure ◽  
Optical Recording ◽  
Mask Layer

Static recording characteristics of super-resolution near-field structure with bismuth mask layer

2005 ◽  
Author(s):  
Feng Zhang ◽  
Yang Wang ◽  
Wendong Xu ◽  
Xiumin Gao ◽  
Fuxi Gan
Keyword(s):  
Near Field ◽  
Super Resolution ◽  
Field Structure ◽  
Mask Layer

Optothermal Property and Decomposition Characteristics of PtOx Ultrathin Film Sandwiched Between ZnS–SiO2 for Super-Resolution Near-Field Recording

2007 ◽  
Vol 7 (1) ◽  
pp. 374-380
Author(s):  
Yung-Chiun Her ◽  
Bou-Yin Liao ◽  
Wei-Chih Hsu ◽  
Song-Yeu Tsai
Keyword(s):  
Activation Energy ◽  
Thermal Decomposition ◽  
Near Field ◽  
Super Resolution ◽  
Decomposition Temperature ◽  
Ultrathin Film ◽  
Field Structure ◽  
Field Recording ◽  
Mask Layer ◽  
Resolution Capability

We have investigated the optothermal property and decomposition characteristics of PtOx ultrathin film protected by ZnS–SiO2 layers and effects of the constituent phases of PtOx on super-resolution capability and read stability of the super-RENS disk. All the ZnS–SiO2/PtOx/ZnS–SiO2 multilayers exhibited a steep reflectivity drop at the temperature range between 265 and 350 °C, corresponding to the decomposition of PtOx. The decomposition temperature of the 4-nm-thick PtOx ultrathin film protected by ZnS–SiO2 layers was much lower than those obtained in thick PtOx films without protection. The activation energy for thermal decomposition was ∼1.3 eV. Both the decomposition temperature and activation energy for thermal decomposition were unaffected by the constituent phases of PtOx. Carrier to noise ratios (CNR) of over 40 dB for mark size of 150 nm were achieved in all super-resolution near-field structure (super-RENS) disks, while the super-resolution readout was limited to 2.5 × 103 ∼ 4.5 × 104 cycles. The effect of constituent phases of PtOx on the super-resolution capability of super-RENS disk with a PtOx mask layer was minimal. However, as the constituent phases of PtOx mask layer transformed from a mixture of Pt and PtO, to pure PtO, and then to a mixture of PtO and PtO2, the readout stability of super-RENS disk increased dramatically since less heat was absorbed by the PtOx mask layer composed of PtO and PtO2 during the readout process, prohibiting the diffusion of materials inside the bubble to the GeSbTe phase change layer.

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