Static recording characteristics of super-resolution near-field structure with bismuth mask layer

2005 ◽  
Author(s):  
Feng Zhang ◽  
Yang Wang ◽  
Wendong Xu ◽  
Xiumin Gao ◽  
Fuxi Gan
2003 ◽  
Vol 83 (11) ◽  
pp. 2136-2138 ◽  
Author(s):  
Yung-Chiun Her ◽  
Yuh-Chang Lan ◽  
Wei-Chih Hsu ◽  
Song-Yeu Tsai

2004 ◽  
Vol 43 (11A) ◽  
pp. 7802-7806 ◽  
Author(s):  
Feng Zhang ◽  
Wendong Xu ◽  
Yang Wang ◽  
Fuxi Gan

2007 ◽  
Vol 7 (1) ◽  
pp. 374-380
Author(s):  
Yung-Chiun Her ◽  
Bou-Yin Liao ◽  
Wei-Chih Hsu ◽  
Song-Yeu Tsai

We have investigated the optothermal property and decomposition characteristics of PtOx ultrathin film protected by ZnS–SiO2 layers and effects of the constituent phases of PtOx on super-resolution capability and read stability of the super-RENS disk. All the ZnS–SiO2/PtOx/ZnS–SiO2 multilayers exhibited a steep reflectivity drop at the temperature range between 265 and 350 °C, corresponding to the decomposition of PtOx. The decomposition temperature of the 4-nm-thick PtOx ultrathin film protected by ZnS–SiO2 layers was much lower than those obtained in thick PtOx films without protection. The activation energy for thermal decomposition was ∼1.3 eV. Both the decomposition temperature and activation energy for thermal decomposition were unaffected by the constituent phases of PtOx. Carrier to noise ratios (CNR) of over 40 dB for mark size of 150 nm were achieved in all super-resolution near-field structure (super-RENS) disks, while the super-resolution readout was limited to 2.5 × 103 ∼ 4.5 × 104 cycles. The effect of constituent phases of PtOx on the super-resolution capability of super-RENS disk with a PtOx mask layer was minimal. However, as the constituent phases of PtOx mask layer transformed from a mixture of Pt and PtO, to pure PtO, and then to a mixture of PtO and PtO2, the readout stability of super-RENS disk increased dramatically since less heat was absorbed by the PtOx mask layer composed of PtO and PtO2 during the readout process, prohibiting the diffusion of materials inside the bubble to the GeSbTe phase change layer.


2008 ◽  
Author(s):  
Laixin Jiang ◽  
Yiqun Wu ◽  
Yang Wang ◽  
Jingsong Wei ◽  
Fuxi Gan

2001 ◽  
Vol 40 (Part 1, No. 6A) ◽  
pp. 4101-4102 ◽  
Author(s):  
Fu Han Ho ◽  
Wei Yi Lin ◽  
Hsun Hao Chang ◽  
Yu Hsaun Lin ◽  
Wei-Chih Liu ◽  
...  

2007 ◽  
Vol 46 (6B) ◽  
pp. 3898-3901 ◽  
Author(s):  
Kazuma Kurihara ◽  
Yuzo Yamakawa ◽  
Takayuki Shima ◽  
Junji Tominaga

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