Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer for ultraviolet devices

2011 ◽  
Vol 78 (7) ◽  
pp. 435 ◽  
Author(s):  
V. N. Bessolov ◽  
S. A. Kukushkin ◽  
L. I. Mets ◽  
Yu. V. Zhilyaev ◽  
E. V. Konenkova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Gallium Nitrides

Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

2014 ◽  
Vol 40 (12) ◽  
pp. 1114-1116 ◽  
Author(s):  
A. S. Grashchenko ◽  
S. A. Kukushkin ◽  
A. V. Osipov
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Deformation Properties

Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films

2019 ◽  
Vol 61 (12) ◽  
pp. 2386-2391 ◽  
Author(s):  
O. N. Sergeeva ◽  
A. V. Solnyshkin ◽  
D. A. Kiselev ◽  
T. S. Il’ina ◽  
S. A. Kukushkin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Silicon Substrate ◽  
Carbide Layer

scholarly journals 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3407 ◽  
Author(s):  
Massimo Zimbone ◽  
Marcin Zielinski ◽  
Corrado Bongiorno ◽  
Cristiano Calabretta ◽  
Ruggero Anzalone ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Growth Parameters ◽  
Stacking Faults ◽  
Phase Boundaries ◽  
Compliant Substrate ◽  
Patterned Substrate ◽  
Inverted Pyramid ◽  
Careful Control ◽  
Cubic Silicon Carbide

This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This compliant substrate prevents stacking faults, usually found at the SiC/Si interface, from reaching the surface. We investigated the effect of the size of the inverted pyramid on the epilayer quality. We noted that anti-phase boundaries (APBs) develop between adjacent faces of the pyramid and that the SiC/Si interfaces have the same polarity on both pyramid faces. The structure of the heterointerface was investigated. Moreover, due to the emergence of APB at the vertex of the pyramid, voids buried on the epilayer form. We demonstrated that careful control of the growth parameters allows modification of the height of the void and the density of APBs, improving SiC epitaxy quality.

scholarly journals Simple method for the growth of 4H silicon carbide on silicon substrate

AIP Advances ◽  
2016 ◽  
Vol 6 (3) ◽  
pp. 035201 ◽  
Author(s):  
M. Asghar ◽  
M. Y. Shahid ◽  
F. Iqbal ◽  
K. Fatima ◽  
Muhammad Asif Nawaz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Simple Method

Ion Beam Synthesis of Silicon Carbide

2005 ◽  
Vol 107 ◽  
pp. 51-54 ◽  
Author(s):  
S. Intarasiri ◽  
Anders Hallén ◽  
A. Razpet ◽  
Somsorn Singkarat ◽  
G. Possnert
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Vacuum Furnace ◽  
Carbon Ions ◽  
Elastic Recoil ◽  
Near Surface ◽  
Ion Beam Synthesis

Formation and crystallization of a thin near-surface layer of silicon carbide on a silicon substrate, created by ion-beam synthesis (IBS), are discussed. 80 and 40 keV carbon ions were implanted into a (1 0 0) high-purity p-type silicon substrate at room temperature and 400 oC, respectively, using doses in excess of 1017 ions/cm2. Elastic recoil detection analysis (ERDA) technique, developed for routine atomic depth profiling at the Angstrom laboratory, Uppsala University, Sweden, was used to investigate the depth distributions of implanted-ions. Infrared transmittance measurement was used as an indication of SiC in the implanted Si substrate. For the samples implanted at high temperature, the results show the existence of a peak at 797 cm-1, indicating the presence of β-SiC, already directly formed during the implantation without postimplantation annealing. While for the samples implanted at room temperature, starting with the band of amorphous Si-C network, the crystalline SiC appears at the annealing temperature as low as 900 oC. In both cases, during further annealing in vacuum, the peak grows in height and narrows in width (according to the measured FWHM) with increasing annealing temperature, indicating a further growth of the SiC layer. However, for thermal annealing at 1000 oC in a vacuum furnace the SiC crystallization was not completed and crystal imperfection where still present. Complementary to IR, Raman scattering measurements were performed. Although no direct evidence of SiC vibrations were observed, the appearance and disappearance of both Si-Si and C-C related bands points out to the formation of silicon and carbon clusters in the implanted layer.

scholarly journals MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates

2018 ◽  
Vol 52 (5) ◽  
pp. 522
Author(s):  
R.R. Reznik ◽  
K.P. Kotlyar ◽  
I.P. Soshnikov ◽  
S.A. Kukushkin ◽  
A.V. Osipov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Buffer Layer ◽  
Structural Properties ◽  
Mole Fraction ◽  
Silicon Substrate ◽  
Mbe Growth ◽  
Inas Nanowires ◽  
First Time

AbstractThe possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.

scholarly journals Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate

2018 ◽  
Vol 52 (5) ◽  
pp. 509
Author(s):  
I.V. Shtrom ◽  
N.G. Filosofov ◽  
V.F. Agekian ◽  
M.B. Smirnov ◽  
A.Yu. Serov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Buffer Layer ◽  
Silicon Substrate ◽  
Optical Characteristics ◽  
Gan Nanowires ◽  
Fundamental Possibility ◽  
Nanowires Growth ◽  
Si Doped

AbstractThe aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

scholarly journals MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate

2018 ◽  
Vol 2018 ◽  
pp. 1-5
Author(s):  
R. R. Reznik ◽  
K. P. Kotlyar ◽  
I. V. Ilkiv ◽  
A. I. Khrebtov ◽  
I. P. Soshnikov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Optical Properties ◽  
Buffer Layer ◽  
Silicon Substrate ◽  
Lattice Mismatch ◽  
Structural Quality ◽  
Optical Studies ◽  
Mbe Growth

The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A3B5 NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.

Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate

2004 ◽  
Vol 30 (8) ◽  
pp. 641-643 ◽  
Author(s):  
Yu. V. Trushin ◽  
E. E. Zhurkin ◽  
K. L. Safonov ◽  
A. A. Schmidt ◽  
V. S. Kharlamov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Mbe Growth
Sign in / Sign up

Export Citation Format

Share Document