A Standard SPICE Model for MQW Lasers Modeling Capture/Escape and Carrier Transport

1996 ◽  
Author(s):  
Kuno Zhuber-Okrog
Keyword(s):  
Carrier Transport ◽  
Spice Model

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Carrier Transport in 2-D Materials: an Ab Initio Study

2019 ◽  
Author(s):  
Mathieu Luisier ◽  
Aron Szabo ◽  
Cedric Klinkert ◽  
Christian Stieger ◽  
Martin Rau ◽  
...  
Keyword(s):  
Ab Initio ◽  
Carrier Transport ◽  
Ab Initio Study

Limits of Charge Carrier Transport in Halide Perovskites Revealed by Optical-Pump Terahertz-Probe Spectroscopy

2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Optical Pump ◽  
Halide Perovskites ◽  
Probe Spectroscopy

ОСОБЕННОСТИ ЭКСТРАКЦИИ SPICE-МОДЕЛЕЙ ТРАНЗИСТОРОВ ДЛЯ ТЕХНОЛОГИЙ КНИ ГЛУБОКОГО СУБМИКРОННОГО УРОВНЯ

2020 ◽  
Vol 96 (3s) ◽  
pp. 680-683
Author(s):  
А.В. Нуштаев ◽  
А.Г. Потупчик
Keyword(s):  
Process Design ◽  
Development Process ◽  
Dynamic Parameters ◽  
Mos Transistors ◽  
Spice Model

Разработаны тестовые структуры для экстракции и верификации статических и динамических параметров SPICE-моделей транзисторов. Проведена экстракция SPICE-моделей МОП-транзисторов А-типа в рамках разработки комплекта средств проектирования для технологии КНИ-180. Проведена верификация статических и динамических параметров полученных моделей транзисторов. The paper highlights test structures for the extraction and verification of static and dynamic parameters of the transistor SPICE model. The SPICE models of A-type MOS transistors for development process design kit for S0I180 technology have been extracted. Verification of static and dynamic parameters of the obtained transistor models has been carried out.

Carrier-Transport Processes in n+-GaAs/n0-GaAs/n+-GaAs Isotype Heterostructures with a Thin Wide-Gap AlGaAs Barrier

2020 ◽  
Vol 54 (5) ◽  
pp. 529-533
Author(s):  
S. O. Slipchenko ◽  
A. A. Podoskin ◽  
O. S. Soboleva ◽  
V. S. Yuferev ◽  
V. S. Golovin ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Transport Processes ◽  
Wide Gap
Sign in / Sign up

Export Citation Format

Share Document