High-temperature cw operation of a double-heterostructure laser emitting at 1.3 μm on Si substrate

1995 ◽  
Author(s):  
Takeshi Yamada ◽  
Masami Tachikawa ◽  
Tohru Sasaki ◽  
Hidefumi Mori ◽  
Yoshiaki Kadota ◽  
...  
Keyword(s):  
High Temperature ◽  
Si Substrate ◽  
Double Heterostructure ◽  
Cw Operation ◽  
Heterostructure Laser

Stable CW operation of 1.3 µm double-heterostructure laser heteroepitaxially grown on Si

1995 ◽  
Vol 31 (6) ◽  
pp. 455-457 ◽  
Author(s):  
T. Yamada ◽  
H. Mori ◽  
M. Tachikawa ◽  
Y. Kadota ◽  
T. Sasaki ◽  
...  
Keyword(s):  
Double Heterostructure ◽  
Cw Operation ◽  
Heterostructure Laser

Room‐temperature operation of an InGaAsP double‐heterostructure laser emitting at 1.55 μm on a Si substrate

1990 ◽  
Vol 57 (6) ◽  
pp. 593-595 ◽  
Author(s):  
Mitsuru Sugo ◽  
Hidefumi Mori ◽  
Masami Tachikawa ◽  
Yoshio Itoh ◽  
Mitsuo Yamamoto
Keyword(s):  
Room Temperature ◽  
Si Substrate ◽  
Double Heterostructure ◽  
Heterostructure Laser ◽  
Room Temperature Operation

Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE

1985 ◽  
Vol 24 (Part 2, No. 3) ◽  
pp. L163-L165 ◽  
Author(s):  
Akira Usui ◽  
Takashi Matsumoto ◽  
Motohiko Inai ◽  
Ikuo Mito ◽  
Kohroh Kobayashi ◽  
...  
Keyword(s):  
Room Temperature ◽  
Double Heterostructure ◽  
Cw Operation ◽  
Heterostructure Laser

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Reliability Implications of Defects in High Temperature Annealed Si/SiO2/Si Structures

1994 ◽  
Vol 338 ◽  
Author(s):  
W. L. Warren ◽  
D. M. Fleetwood ◽  
M. R. Shaneyfelt ◽  
P. S. Winokur ◽  
R. A. B. Devine ◽  
...  
Keyword(s):  
High Temperature ◽  
Chemical Potential ◽  
Field Effect Transistors ◽  
Radiation Sensitivity ◽  
Oxide Semiconductor ◽  
Interfacial Region ◽  
Si Substrate ◽  
Paramagnetic Defect ◽  
Chemical Potential Difference ◽  
Hole Trapping

ABSTRACTHigh-temperature post-oxidation annealing of poly-Si/SiO2/Si structures such as metal-oxidesemiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. We have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases the origin of the defects may be attributed to out-diffusion of O from the SiO2 network into the Si substrate with associated reduction of the oxide. We present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO2/Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies.

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 μm Cmos Devices

1998 ◽  
Vol 525 ◽  
Author(s):  
L. P. Ren ◽  
P. Liu ◽  
G. Z. Pan ◽  
Jason C. S. Woo
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Amorphous Layer ◽  
Sharp Interface ◽  
Silicide Formation ◽  
Si Substrate ◽  
Metal Thickness ◽  
Substrate Doping

ABSTRACTA novel low temperature self-aligned Ti silicidation with Ge+ pre-amorphization implant (PAI) is presented. Compared to conventional high temperature PAM silicidation, the advantages of Ti salicidation at temperatures below the recrystallization of a pre-amorphized layer are: (1) C49 TiSi2 silicide formation occurs only in the pre-amorphized layer so that the silicide depth can be well controlled, forming a very sharp interface between the silicide and the Si substrate; (2) Ti just reacts with the amorphous layer, avoiding the so-called bridging issue in which the silicide grows laterally over the isolation or spacer; (3) the effects of metal thickness and substrate doping on silicide formation are suppressed.

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